Diamond Semiconductor Device With Nitrogen Interlayer

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Solution Overview

Problem

Diamond semiconductor devices face challenges in achieving high breakdown voltage and reliable operation due to surface leakage, electric field concentration, and poor adhesion of insulating layers, particularly with n-type doping and dry etching processes that can cause lattice distortion and surface planarization issues.

Innovation Solution

Incorporating a nitrogen-containing diamond semiconductor layer with controlled impurity concentrations and using insulating layers like silicon oxide or aluminum nitride to relax electric fields and improve adhesion, while maintaining high breakdown voltage and reducing contact resistance through specific electrode configurations.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If n-type doping is used in diamond semiconductor layers, then conductivity is improved, but surface leakage and electric field concentration increase

Engineering Contradiction:

Improvebreakdown voltageVSAvoidsurface leakage

Core Design Contradiction:

ReliabilityVSObject-generated harmful factors

Solution Approach 1:

A third diamond semiconductor layer containing nitrogen is introduced as an intermediary layer between the first and second diamond semiconductor layers. This nitrogen-containing layer acts as a mediator that relaxes electric field concentration at the junction interface, thereby reducing surface leakage while maintaining the high conductivity provided by n-type doping in the adjacent layers.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent applies different doping strategies to different regions: the first and second diamond semiconductor layers use n-type doping for high conductivity, while the third diamond semiconductor layer uses nitrogen doping to create a specific electrical property profile that relaxes electric field concentration. This local differentiation of material properties resolves the contradiction between conductivity and surface leakage.

Inventive Principle:

Principle #3Local quality

2Reliability

If insulating layers are added to reduce surface leakage, then reliability improves, but adhesion and surface planarization deteriorate

Engineering Contradiction:

Improvebreakdown voltageVSAvoidadhesion

Core Design Contradiction:

ReliabilityVSStability of the object's composition

Solution Approach 1:

The nitrogen-containing third diamond semiconductor layer serves as an intermediary that improves the interface quality between doped regions and insulating layers. This layer enhances adhesion and maintains surface planarization while still providing the electric field relaxation needed for high breakdown voltage, thus resolving the adhesion problem associated with insulating layers.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

By changing the electrical parameters through nitrogen doping rather than traditional insulating coatings, the patent achieves electric field relaxation without compromising adhesion or surface planarization. The nitrogen-containing layer modifies the electrical field distribution through its specific carrier properties rather than through physical insulation.

Inventive Principle:

Principle #35Parameter changes

3Productivity

If dry etching is used for manufacturing, then productivity improves, but lattice distortion and surface planarization issues occur

Engineering Contradiction:

Improvemanufacturing efficiencyVSAvoidsurface planarization

Core Design Contradiction:

ProductivityVSManufacturing precision

Solution Approach 1:

The nitrogen-containing third diamond semiconductor layer is formed beforehand to compensate for potential surface damage and lattice distortion that may occur during subsequent dry etching processes. This layer acts as a cushion that protects the underlying crystal structure and maintains surface planarization even when aggressive manufacturing techniques are used.

Inventive Principle:

Principle #11Beforehand cushioning (Prior cushioning)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The semiconductor device achieves high breakdown voltage and reliability by using nitrogen-doped diamond layers for improved adhesion and surface planarization, along with field plate regions to relax electric fields, resulting in efficient conductivity modulation and low resistance diodes.

Implementation Method 1

field plate regions to relax electric fields

Methodology Applied

Scientific EffectElectric field relaxation: Electric Field

Implementation Method 2

insulating layers like silicon oxide or aluminum nitride to relax electric fields and improve adhesion

Methodology Applied

Scientific EffectAdhesion: Adhesive

Data Source

PatentUS10181515B2Semiconductor device

Publication Date: 2019.01.15 KK TOSHIBA

AI summary

Provided is a semiconductor device according to an embodiment including an i-type or first-conductivity-type first diamond semiconductor layer having a first side surface, a second-conductivity-type second diamond semiconductor layer provided on the first diamond semiconductor layer and having a second side surface, a third diamond semiconductor layer being in contact with the first side surface and the second side surface, the third diamond semiconductor containing nitrogen, a first electrode electrically connected to the first diamond semiconductor layer, and a second electrode electrically connected to the second diamond semiconductor layer.