Semiconductor Power Module Metal Block Wiring
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Solution Overview
Problem
Semiconductor power modules face issues with current concentration and inadequate heat dissipation due to small bonding areas between Al wires and semiconductor power devices, leading to local heat generation and reduced heat release efficiency.
Innovation Solution
The use of a metal block with a larger diameter than wires as a wiring member connecting semiconductor power devices to external terminals, which distributes current and enhances heat release, while also incorporating a top plate with a support portion to absorb shocks and prevent device breakage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If a plurality of Al wires are bonded to each semiconductor power device, then the bonding area is increased, but the pitch of the Al wires is limited and current concentration still occurs
Solution Approach 1:
The patent changes the geometry parameter of the wiring member from a thin wire to a block-like structure with larger cross-sectional dimensions. This parameter change increases the bonding area significantly while providing sufficient pitch between multiple wiring members, thereby eliminating current concentration effects and achieving uniform current distribution across the semiconductor power device.
2Temperature
If the diameter of the Al wire is increased, then the heat releasing effect is improved, but the bonding area remains insufficient for high current applications
Solution Approach 1:
The patent transitions from a one-dimensional wire structure to a three-dimensional block structure. This dimensional change allows the wiring member to provide both large bonding area (through increased cross-sectional dimensions) and effective heat dissipation (through increased volume and thermal mass), simultaneously resolving both requirements for high current and heat release applications.
3Temperature
If the number of Al wires is increased to ensure large bonding areas, then heat releasing effect is improved, but the structural complexity and manufacturing difficulty increase
Solution Approach 1:
The patent merges multiple functions into a single wiring member structure: electrical connection, heat dissipation, and mechanical support. By using a block-like wiring member instead of multiple thin wires, the design achieves large bonding area and effective heat release while reducing structural complexity and simplifying the bonding process, as fewer larger components are easier to position and bond than many smaller ones.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively levels current flow, improves heat dissipation, and protects the semiconductor power devices from mechanical shocks, resulting in a semiconductor power module with enhanced reliability and longevity.
Implementation Method 1
a metal block, having a surface and a rear surface with the rear surface bonded to the surface of the semiconductor power device, uprighted from the surface of the semiconductor power device in a direction separating from the base member and employed as a wiring member for the semiconductor power device
Implementation Method 2
capable of leveling current flowing from a semiconductor power device and capable of efficiently releasing heat generated in the semiconductor power device
Implementation Method 3
incorporating a top plate with a support portion to absorb shocks and prevent device breakage
Data Source
AI summary
A semiconductor power module according to the present invention includes a base member, a semiconductor power device having a surface and a rear surface with the rear surface bonded to the base member, a metal block, having a surface and a rear surface with the rear surface bonded to the surface of the semiconductor power device, uprighted from the surface of the semiconductor power device in a direction separating from the base member and employed as a wiring member for the semiconductor power device, and an external terminal bonded to the surface of the metal block for supplying power to the semiconductor power device through the metal block.