Through Electrode Blocking Layer for TSV Reliability

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Solution Overview

Problem

The reliability and electrical properties of semiconductor devices with through silicon vias (TSVs) are compromised due to pre-treatment processes like polishing and cleaning, which can lead to reduced performance and increased risk of metal residue formation.

Innovation Solution

A method involving the formation of an etch-stop layer and a blocking layer pattern around the through electrode structure, with a conductive via connecting to the through electrode, to prevent exposure and reduce stress, using materials like silicon nitride and copper, and a double damascene process for wiring and interconnection.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If pre-treatment processes (polishing or cleaning) are performed on through electrode structures, then the surface quality is improved, but metal residue formation increases and reliability decreases

Engineering Contradiction:

Improvesurface qualityVSAvoiddevice reliability

Core Design Contradiction:

Manufacturing precisionVSReliability

Solution Approach 1:

A blocking layer is formed on the through electrode structure before pre-treatment processes to protect it in advance. This preliminary protective action prevents metal residue formation during subsequent polishing or cleaning operations, allowing surface quality improvement without compromising reliability

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The blocking layer acts as an intermediary between the through electrode structure and the pre-treatment process. It serves as a sacrificial protective layer that can be removed after treatment, enabling the through electrode to undergo necessary surface treatment without direct exposure to harmful processes

Inventive Principle:

Principle #24Intermediary (Mediator)

2Area of stationary object

If through silicon via technology is used to decrease mounting space, then device integration density increases, but stress on the through electrode structure increases

Engineering Contradiction:

Improvemounting spaceVSAvoidstress on through electrode

Core Design Contradiction:

Area of stationary objectVSStress or pressure

Solution Approach 1:

The blocking layer is formed beforehand to cushion and distribute mechanical stress on the through electrode structure. This protective layer absorbs stress during subsequent processing steps, preventing stress concentration that could compromise the integrity of the through electrode while maintaining the compact mounting space benefits

Inventive Principle:

Principle #11Beforehand cushioning (Prior cushioning)

Data Source

PatentUS9559002B2Methods of fabricating semiconductor devices with blocking layer patterns

Publication Date: 2017.01.31 SAMSUNG ELECTRONICS CO LTD

AI summary

A semiconductor device includes a circuit device on a substrate and a first insulating interlayer on the substrate and covering the circuit device. An electrode structure extends through the first insulating interlayer and at least partially through the substrate. An etch-stop layer pattern is disposed on a sidewall of the electrode structure on a side of the first insulating layer opposite the substrate. A blocking layer pattern is disposed on the etch-stop layer pattern. The device further includes an interconnection structure including a via portion passing through the blocking layer pattern to contact the through electrode structure and a wiring portion on the via portion and having a different width than the via portion. The semiconductor device may further include a contact plug electrically connected to the circuit device through the first insulating interlayer. The contact plug and the through electrode structure may include different metals.