Semiconductor Package Redistribution Line Structure for High-Speed Memory
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Solution Overview
Problem
Conventional semiconductor packages face challenges in reducing input capacitance, which limits the operation speed of memory modules due to the high capacitance load, making it difficult to achieve high-density and high-speed memory systems.
Innovation Solution
A semiconductor package design featuring a stack structure with a redistribution line structure, where two semiconductor chips are stacked with their active surfaces facing each other, and bonded through redistribution lines and bumps, optimizing the chip arrangement to decrease input capacitance by reducing the capacitance of redistribution lines and substrate components.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If a plurality of memory chips are stacked to create high capacity memory, then the memory capacity is increased, but the input capacitance increases which limits operation speed
Solution Approach 1:
The patent transitions from planar chip arrangement to three-dimensional stacking configuration. Memory chips are arranged vertically in multiple layers with active surfaces facing each other, utilizing the vertical dimension to increase storage capacity while maintaining compact footprint. This dimensional change allows higher density without proportionally increasing signal path length and capacitance.
Solution Approach 2:
The package is divided into multiple independent chip modules stacked vertically. Each chip is a separate functional unit with its own bonding pads and interconnection structure. This segmentation allows independent optimization of each chip's electrical characteristics while achieving high overall capacity through parallel stacking, thereby managing total capacitance more effectively.
2Quantity of substance
If conventional package structures are used with stacked chips, then high density is achieved, but high input capacitance load reduces operation speed
Solution Approach 1:
Redistribution lines are introduced as intermediary conductive structures between the bonding pads of stacked chips and the external package terminals. These redistribution lines optimize the electrical path by reducing parasitic capacitance and inductance, acting as mediators that improve signal integrity and reduce the overall input capacitance load while maintaining the high-density stacked configuration.
Solution Approach 2:
The patent modifies key electrical parameters including reducing the capacitance of redistribution lines and substrate components. By changing the physical dimensions, material properties, and layout of interconnection structures, the input capacitance is optimized to enable faster operation speeds while preserving the high-density stacked chip architecture.
3Ease of manufacture
If chips are arranged in conventional planar configuration, then manufacturing is simple, but capacitance load is high which limits speed performance
Solution Approach 1:
The invention moves from two-dimensional planar chip arrangement to three-dimensional vertical stacking. Chips are positioned in multiple layers with active surfaces facing each other, connected through bump structures and redistribution lines. This vertical configuration increases density and reduces signal path lengths, improving operation speed while maintaining manufacturability through established 3D packaging processes.
Solution Approach 2:
The package employs composite interconnection structures combining different materials and techniques: bump structures for chip-to-chip bonding, redistribution lines for signal routing, and substrate materials for mechanical support. This composite approach optimizes electrical performance by reducing capacitance while maintaining ease of manufacture through integrated multi-material processing.
Data Source
AI summary
A semiconductor package may include a first semiconductor chip having first bonding pads on a first active surface. The semiconductor package may include a second semiconductor chip having second bonding pads which are arranged on a second active surface. The first and second semiconductor chips are stacked such that the first and second active surfaces face each other.