Comb-Shaped Capacitor Element for High Dielectric Density
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Solution Overview
Problem
Capacitor elements, particularly in low-pass filters, face challenges in achieving sufficiently large dielectric capacitance per unit area, which is crucial for effective performance in electronic devices.
Innovation Solution
The design incorporates a capacitor element with a first and second comb-shaped interconnection over a substrate, featuring comb teeth that are alternately arranged and connected to electrodes, with a dielectric layer in between, allowing for a reduction in the gap between electrodes to enhance dielectric capacitance per unit area.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If conventional capacitor structures are used, then the device complexity is low, but the dielectric capacitance per unit area is insufficient
Solution Approach 1:
The patent transitions from conventional planar capacitor structures to a three-dimensional stacked configuration with multiple electrode layers (first electrode layer, second electrode layer, third electrode layer) separated by dielectric layers. This vertical stacking in the third dimension significantly increases the effective capacitance area without expanding the planar footprint, thereby achieving higher dielectric capacitance per unit area
Solution Approach 2:
The capacitor is divided into multiple discrete electrode layers and dielectric layers that can be independently formed and configured. Each electrode layer (first, second, third electrodes) can be separately patterned with comb-shaped interconnections, allowing optimized capacitance distribution across different layers while maintaining manufacturing feasibility through standard semiconductor fabrication processes
2Quantity of substance
If the gap between electrodes is reduced to increase capacitance, then the dielectric capacitance per unit area increases, but the manufacturing precision requirements increase
Solution Approach 1:
The patent systematically varies the gap distances between different electrode layers to optimize capacitance while managing manufacturing complexity. Specifically, the first gap (between first and second electrodes) and second gap (between second and third electrodes) can be differently configured, allowing selective optimization of capacitance contributions from each dielectric layer based on manufacturing capabilities and performance requirements
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively increases dielectric capacitance per unit area, improving the performance of capacitor elements in electronic devices by enabling larger parallel-plate and fringe capacitance, thereby supporting better voltage and frequency characteristics.
Implementation Method 1
a first dielectric layer formed between the first electrode and the second electrode
Implementation Method 2
dielectric capacitance per unit area, which is crucial for effective performance
Data Source
AI summary
A semiconductor device includes a capacitor element including a first comb-shaped interconnection formed over a substrate and including a first comb tooth, a second comb-shaped interconnection formed over the substrate and including a second comb tooth opposed to the first comb tooth, and a first electrode and a second electrode opposed to each other with opposed surfaces of the first electrode and the second electrode intersecting a longitudinal direction of the first comb tooth and the second comb tooth, a first dielectric layer formed between the first electrode and the second electrode, the first electrode being connected to the first comb tooth, and the second electrode being connected to the second comb tooth.