Combinational Resistive Change Element Arrays for High Density Memory
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Solution Overview
Problem
Resistive change element arrays face limitations in storing information efficiently due to the inability to effectively utilize relational states of resistive change elements, which restricts their capacity to store multiple bits of data in a compact and power-efficient manner.
Innovation Solution
A combinational resistive change element array is designed, comprising multiple resistive change elements that can be adjusted between various resistive states, forming relational states through ratios and sums of resistances, allowing for the storage of information as characters or binary numbers, with shared elements to increase memory density and reduce power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If traditional resistive change elements are used to store data, then each element can store one or a few bits of data, but the memory density and data storage capacity are limited
Solution Approach 1:
The patent combines multiple resistive change elements (first and second elements) into a single combinational cell that stores data as relational states. Instead of using separate cells for each bit, the invention merges elements to share common structures (conductive structures, selection devices), thereby increasing storage capacity while reducing overall device complexity and improving memory density.
Solution Approach 2:
The resistive change elements serve multiple functions: they individually contribute to the relational state while sharing common conductive structures and selection devices with other elements in the array. This multi-functionality allows a single element to participate in multiple data storage configurations, enhancing storage capacity without proportionally increasing device complexity.
2Quantity of substance
If more resistive change elements are added to increase storage capacity, then data storage capacity improves, but power consumption increases
Solution Approach 1:
By merging multiple resistive change elements into combinational cells that share common conductive structures and selection devices, the invention reduces the total number of independent components required. This sharing arrangement decreases overall power consumption while maintaining enhanced storage capacity, as fewer independent selection devices and conductive structures need to be actively controlled.
3Device complexity
If traditional resistive change elements are used, then the array structure is simple, but the ability to store multiple bits of data in a compact manner is restricted
Solution Approach 1:
The invention merges multiple resistive change elements into combinational cells that share common conductive structures and selection devices. This merging approach increases memory density by allowing multiple bits to be stored in a compact arrangement, while the shared structures prevent proportional increases in device complexity, maintaining relative structural simplicity.
4Productivity
If relational states are used to store data, then storage efficiency improves, but the complexity of managing and accessing relational states increases
Solution Approach 1:
The resistive change elements are designed to serve multiple functions within the relational state system. Each element can individually contribute to different relational states while sharing common conductive structures and selection devices. This multi-functionality enables efficient storage of multiple bits through relational states without proportionally increasing the complexity of managing and accessing these states, as the same physical structures serve multiple logical purposes.
Data Source
AI summary
Combinations of resistive change elements and resistive change element arrays thereof are described. Combinational resistive change elements and combinational resistive change element arrays thereof are described. Devices and methods for programming and accessing combinations of resistive change elements are described. Devices and methods for programming and accessing combinational resistive change elements are described.