Complementary Memory Cell Layout Without Current Sense Amplifiers

The patent extracts the reading function from the complex current sensitive amplifier circuit and implements it through a simplified complementary circuit structure with cross-coupled transistors and diodes. This extraction eliminates the need for large-area CSA while maintaining the ability to read memory states by converting current signals to voltage outputs that can be directly sensed.

The patent uses a complementary symmetry design where each storage element has a corresponding complementary element (N-type and P-type transistors, pull-up and pull-down diodes). This copying approach creates a balanced circuit that naturally amplifies the reading signal through the complementary action of paired components, replacing the need for external sensitive amplifiers.

The patent merges the reading and amplifying functions into a single integrated complementary circuit block. The cross-coupled transistors and diodes work together to simultaneously perform signal detection and amplification, eliminating the need for separate complex reading circuits while maintaining high reading accuracy through the inherent gain of the complementary configuration.

The complementary circuit structure serves multiple functions: it acts as a readout circuit, a signal amplifier, and a state detector simultaneously. The same cross-coupled transistor-diode configuration handles both the sensing of memory states and the amplification of the resulting signals, reducing overall device complexity while maintaining functionality.

The patent substitutes current signal processing with voltage signal processing through the complementary circuit. By converting the current output from the storage element into a voltage output through the action of cross-coupled transistors and diodes, the system replaces the noise-sensitive current domain with the more noise-tolerant voltage domain while maintaining the storage function.

The complementary circuit acts as an intermediary between the current-output storage element and the voltage-based external circuitry. The cross-coupled transistors and diodes convert and buffer the current signal, providing noise immunity and signal conditioning that protects against noise while maintaining the integrity of the stored information.