Complementary TFT Using Metal Oxide and Organic Semiconductors
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Solution Overview
Problem
The existing technology for low temperature poly-silicon (LTPS) complementary thin film transistors has a complex and costly process due to the different doping methods used for p-type and n-type thin film transistors, which complicates the manufacturing of CMOS integrated circuits.
Innovation Solution
A complementary thin film transistor is developed using a metal oxide material for the n-type semiconductor layer and an organic semiconductor material for the p-type semiconductor layer, with a simplified process that includes a first and second passivation layer and electrode metal layers, and optionally an etched barrier layer, to reduce manufacturing costs and improve device characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If different doping methods are used for p-type and n-type thin film transistors in LTPS technology, then the transistor performance can be optimized, but the manufacturing process becomes complex and costly
Solution Approach 1:
The patent changes the material parameters by using organic semiconductor materials for both p-type and n-type thin film transistors instead of traditional LTPS materials. This parameter change allows both transistor types to be formed using the same doping methodology, thereby optimizing performance while reducing manufacturing process complexity and cost
Solution Approach 2:
The patent applies homogeneity by using the same material class (organic semiconductors) and相同 doping process for both p-type and n-type transistors. This eliminates the need for different doping methods that would otherwise be required in LTPS technology, simplifying the manufacturing process while maintaining optimized transistor performance
2Reliability
If different doping methods are used for p-type and n-type thin film transistors, then the transistor characteristics can be optimized, but the manufacturing cost increases
Solution Approach 1:
The patent changes the material parameters to organic semiconductors, which can be processed using the same doping methodology for both p-type and n-type transistors. This parameter change maintains optimized transistor characteristics while reducing manufacturing cost by eliminating the need for separate doping process lines and reducing process complexity
Solution Approach 2:
The patent achieves universality by developing a single doping methodology that can be applied to form both p-type and n-type thin film transistors. This multi-functional approach allows the same process equipment and techniques to be used for both transistor types, reducing manufacturing cost while maintaining optimized characteristics
Data Source
AI summary
A complementary thin film transistor and manufacturing method thereof are provided. The complementary thin film transistor has a substrate, an n-type semiconductor layer, a p-type semiconductor layer, a first passivation layer, a first electrode metal layer, and a second electrode metal layer. The n-type semiconductor layer is disposed above the substrate, and comprises a metal oxide material. The p-type semiconductor layer is disposed above the substrate, and comprises an organic semiconductor material. The first passivation layer is disposed between the n-type semiconductor layer and the p-type semiconductor layer, and formed with at least one contacting hole. The first electrode metal layer and the second electrode metal layer are electrically connected with each other through the contacting hole.