Solid-State Devices TRIZ Cases

A light source module uses blue LEDs and wavelength converting layers to generate red and green light.

Spatial oxygen concentration variations in hafnium oxide facilitate conductive filaments at lower voltages, improving programming efficiency.

A dedicated infrared absorption layer prevents light scattering and maintains pixel resolution without thickening the optical system.

Merging odd and even cell wiring layers reduces fabrication complexity while lowering electric resistance for selection transistors.

An ion-doped photosensitive resin layer on signal wires absorbs external light to reduce reflection in display devices.

A three-dimensional resistive random access memory architecture stacks alternating conductive and insulating layers with vertical bit line vias.

Unified contact formation reduces boundary region width by eliminating separate mask arrangements, increasing chips per wafer.

A 3D memory structure uses charge trapping multilayers and ultra-thin channels to store electrical data vertically.

A light emitting device uses a transparent layer between the semiconductor element and a second wavelength conversion layer to transmit optical signals.

Matrix contact holes enable parallel connection electrodes in OLED panels, overcoming fine metal mask constraints to increase aperture ratio.

A semiconductor device structure featuring fins with different crystal directions connected by an inter-fin member to improve heat release efficiency.

A liquid crystal display array substrate uses transparent conductive source and drain electrodes to lower contact resistance.

Differential wettability patterns quantum dot color filters without physical banks, preventing color mixing and boosting manufacturing efficiency.

A common control unit drives multiple high voltage switching circuits to pump signal levels efficiently.

A memcapacitor device uses mobile dopants between electrodes to achieve variable capacitance states.

Graded indium composition in the quantum well reduces compressive stress and internal fields, mitigating the quantum-confined Stark effect.

A conductive etch-stop layer sits between the lower metal interconnect and bottom electrode to define a planar topography.

An aluminum-titanium electrode layer provides low surface roughness and dense microstructure.

An interface layer with a high energy gap prevents exciton quenching at the boundary of phosphorescent and fluorescent emitters, extending operational lifetime.

Plasma oxidation creates a removable metal oxide layer that separates the element stack from the substrate without physical stress or contamination.

Extended damage region restricts hole flow to improve boundary recovery characteristic.

A complementary thin film transistor combines a metal oxide n-type layer with an organic p-type layer to simplify device fabrication.

Dual-layer LED sealing structures increase light divergence to resolve the trade-off between extraction efficiency and uniform intensity.

An anti-reflecting layer with a refractive index between the second electrode and optical film improves light extraction.

A curved barrier surface prevents encapsulation peeling and water ingress by enhancing mechanical interlocking at the interface.

Concentrating units with graded refractive index collect reflected light between pixel points to boost sensor sensitivity.

Alternating quantum wells with distinct band gaps stack on one substrate, cutting manufacturing costs while maintaining light-emitting efficiency.

An inverted organic light-emitting diode structure with an n-type thin-film transistor connects the cathode to the drain terminal.

Low-indium InGaN barriers reduce piezoelectric polarization, mitigating efficiency droop at high current densities.

A lateral bipolar transistor switches to low impedance for rapid discharge of electrostatic events.

Non-metallic reflective and scattering layers redirect trapped light in OLED devices to increase luminance output.

A double-layer conductive electrode structure with an oxidized interface layer improves aperture ratio in liquid crystal displays.

Fluorinated photoresists and solvents resolve chemical incompatibility issues, allowing high-resolution patterning without damaging sensitive organic layers.

A light-emitting element electrode incorporates a conductive inclusion to reduce electrical resistance at the metal surface.

An octagonal concentric photodiode array de-multiplexes optical energies, eliminating lens alignment complexity and environmental sensitivity.

Vertical integration with through-silicon vias reduces parasitic capacitances and self-actuation risks in high-frequency MEMS devices.

An asymmetric light waveguide opening shape guides photons to photoelectric conversion portions with high efficiency.

Placing the touch driver directly on the window eliminates bulky flexible circuits, resolving the conflict between slim profiles and reliable touch sensing.

A transparent display panel uses opposite-surface self-luminous sub-pixels to increase pixel density on a limited substrate area.

Photosensitive semiconductive layers enable optical tuning of electronic components for flexible frequency control.

Ion implantation forms a doped region beneath the buried dielectric layer, achieving over 30 dB suppression of multiple order RF harmonics.

A luminescent unit with a mixed light-emitting layer and thinner dopant layer optimizes carrier recombination regions.

A thin film deposition apparatus uses a moving patterning slit sheet to deposit material on a substrate.

Relocating insulating dams outside the bending area prevents liquid organic material flow while reducing stress concentration on the flexible display substrate.

Segmenting the conductive strip into undoped and doped regions lowers series resistance while avoiding high thermal budgets from ion implantation.

A photoelectric conversion element uses a stacked organic and inorganic structure to improve sensitivity.