Semiconductor Peeling via Metal Oxide Plasma Treatment
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Solution Overview
Problem
Conventional methods for peeling semiconductor devices from supporting substrates often result in damage, contamination, and increased costs due to physical stress and the difficulty in reusing substrates, with the quality of the peeling layer affecting the reliability of thin film transistors and semiconductor devices.
Innovation Solution
A method involving the formation of a metal oxide film using high-density plasma treatment, followed by the deposition of a base film and a protective layer, with selective removal and sealing using flexible films, to facilitate the peeling and reattachment of the semiconductor device without causing damage or contamination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional methods (grinding, polishing, or dissolving) are used to remove the supporting substrate, then the element layer can be separated, but damage due to physical stress and contamination occurs, and substrate reuse becomes extremely difficult
Solution Approach 1:
A peeling layer is introduced as an intermediary between the supporting substrate and the element layer. This peeling layer is specifically designed to be selectively removable, allowing the element layer to be separated from the substrate without applying physical stress or causing contamination to the element layer itself.
Solution Approach 2:
The patent replaces mechanical removal methods (grinding, polishing) with a chemical selective removal process. The peeling layer is removed through selective chemical etching or dissolution, eliminating the need for mechanical forces that cause damage and contamination to the element layer.
2Reliability
If the supporting substrate is removed by grinding or polishing, then the element layer can be separated, but the substrate cannot be reused and cost increases
Solution Approach 1:
The peeling layer serves as a sacrificial intermediary that is selectively removed while leaving the supporting substrate intact. This allows the substrate to be reused for subsequent element layer fabrication, significantly reducing material loss and manufacturing cost.
3Ease of manufacture
If a peeling layer is provided between the supporting substrate and the element layer, then selective removal can separate the element layer, but the quality of the peeling layer affects transistor properties and device reliability
Solution Approach 1:
The patent carefully controls the composition, thickness, and material properties of the peeling layer to ensure it can be selectively removed without affecting the element layer. The peeling layer parameters are optimized so that removal conditions (chemical etching, dissolution) do not impact the underlying transistor structures.
Solution Approach 2:
The peeling layer is designed with specific local properties - it has different chemical composition and thickness characteristics compared to surrounding layers. This local differentiation enables selective removal while maintaining the integrity and electrical properties of the transistor elements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the manufacturing of semiconductor devices with high reliability and low costs by ensuring even film thickness and minimizing substrate reuse issues, while maintaining the integrity of the thin film transistor and semiconductor device quality.
Implementation Method 1
forming a metal oxide film over the surface of the metal film by performing plasma treatment to the metal film in an atmosphere containing oxygen
Implementation Method 2
an electron density of plasma is 1×10^11 cm^−3 or more and 1×10^13 cm^−3 or less and an electron temperature of the plasma treatment is 0.5 eV or more and 1.5 eV or less around the substrate
Data Source
AI summary
The present invention provides a manufacturing method of a semiconductor device at low cost and with high reliability. According to one feature of a method for manufacturing a semiconductor device includes the steps of forming a metal film over a substrate; forming a metal oxide film over the surface of the metal film by performing plasma treatment to the metal film in an atmosphere containing oxygen; forming a base film over the metal oxide film; forming an element layer having a thin film transistor over the base film; forming a protective layer over the element layer; forming an opening after selectively removing the metal film, the metal oxide film, the base film, the element layer, and the protective layer; separating the base film, the element layer, and the protective layer from the substrate; and sealing the base film, the element layer, and the protective layer by using flexible first and second films, in which an electron density of plasma around the substrate is 1×1011 cm−3 or more and 1×1013 cm−3 or less and an electron temperature of the plasma treatment is 0.5 eV or more and 1.5 eV or less.