Memcapacitor Devices With Mobile Dopants For Programmable Capacitance
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Solution Overview
Problem
Capacitors and field effect transistors typically have fixed capacitance and threshold voltage, limiting their programmability and adaptability in electronic circuits, whereas there is a need for devices with variable and adjustable capacitance and threshold voltage for advanced memory technologies.
Innovation Solution
A memcapacitor device and field effect transistor device are designed with statically programmable semiconductive materials containing mobile dopants between conductive electrodes, allowing for programmable capacitance and threshold voltage states by controlling the distribution of mobile dopants through voltage differentials, enabling multiple programmable states with retention after voltage removal.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If capacitors and field effect transistors are manufactured with fixed capacitance and threshold voltage, then manufacturing process is simple and reliable, but programmability and adaptability are limited
Solution Approach 1:
The patent applies the dynamics principle by making the capacitor and transistor parameters changeable through mobile dopant migration. The mobile dopants can move between different regions when voltage is applied, dynamically changing the capacitance value and threshold voltage respectively. This allows the devices to adapt to different programming states while maintaining a relatively simple fixed physical structure, resolving the contradiction between programmability and device complexity.
Solution Approach 2:
The patent directly applies parameter changes by modifying the electrical parameters (capacitance, threshold voltage) through controlled movement of mobile dopants. By applying voltage differentials, the mobile dopants migrate to create different charge states, thereby changing the operational parameters of the devices without altering their physical structure. This enables programmability while keeping the device structure relatively simple.
2Adaptability or versatility
If mobile dopants are used to achieve programmable states, then adaptability and programmability are enhanced, but device structure and material composition become more complex
Solution Approach 1:
The patent applies composite materials by combining fixed dopants and mobile dopants within the semiconductor layer. The mobile dopants (such as lithium ions) are embedded within the semiconductor matrix along with fixed dopants, creating a composite material structure. This composite approach enables programmable states through mobile dopant migration while maintaining structural integrity and controlling the complexity of material composition.
3Adaptability or versatility
If fixed dopants are used to establish threshold voltage, then device performance is stable, but programmability is lost
Solution Approach 1:
The patent merges the functions of fixed dopants and mobile dopants within the same semiconductor layer. The fixed dopants provide a stable baseline threshold voltage, while the mobile dopants can migrate to adjust the threshold voltage to different programmed states. This merging allows the device to maintain stability from the fixed dopants while gaining programmability through the mobile dopants, resolving the contradiction between stability and adaptability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The devices achieve variable capacitance and threshold voltage states, enhancing the programmability and adaptability of capacitors and transistors, which is crucial for advanced memory technologies, such as non-volatile memory arrays, by maintaining programmed states without external voltage, thus improving data retention and reducing disturb issues.
Implementation Method 1
controlling the distribution of mobile dopants through voltage differentials
Implementation Method 2
maintaining programmed states without external voltage, thus improving data retention
Data Source
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AI summary
A memcapacitor device includes a pair of opposing conductive electrodes. A semiconductive material including mobile dopants within a dielectric and a mobile dopant barrier dielectric material are received between the pair of opposing conductive electrodes. The semiconductive material and the barrier dielectric material are of different composition relative one another which is at least characterized by at least one different atomic element. One of the semiconductive material and the barrier dielectric material is closer to one of the pair of electrodes than is the other of the semiconductive material and the barrier dielectric material. The other of the semiconductive material and the barrier dielectric material is closer to the other of the pair of electrodes than is the one of the semiconductive material and the barrier dielectric material. Other implementations are disclosed, including field effect transistors, memory arrays, and methods.