Oxygen-Modulated Hafnium Oxide for Low-Voltage Resistive Memory

Solution Overview

Problem

Resistive memory devices using hafnium oxide materials require high programming voltages due to uniform composition, which limits their efficiency in forming conductive filaments for data storage.

Innovation Solution

The implementation of oxygen-modulated hafnium oxide layers with compositional variations perpendicular to the electrode spacing direction, facilitating the formation of stable and strong conductive filaments at lower voltages by creating regions with varying oxygen concentrations.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If uniform hafnium oxide material is used, then the device structure is simple, but high programming voltages are required which reduces efficiency

Engineering Contradiction:

Improvematerial uniformityVSAvoidprogramming efficiency

Core Design Contradiction:

Ease of manufactureVSProductivity

Solution Approach 1:

The patent applies local quality by creating regions with different oxygen concentrations within the hafnium oxide layer. Specifically, it forms a first region with a first oxygen concentration and a second region with a second oxygen concentration that differs from the first. This spatial variation in compositional properties enables different functional zones that facilitate conductive filament formation at lower voltages, thus improving programming efficiency while maintaining a relatively simple overall device structure.

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The patent implements parameter changes by modifying the oxygen concentration parameter within the hafnium oxide material. By controlling the oxygen concentration to vary spatially (creating regions with different oxygen levels), the material's electrical properties are changed to enable more efficient programming. This parameter modulation allows the device to achieve the desired functionality without requiring high programming voltages.

Inventive Principle:

Principle #35Parameter changes

2Productivity

If oxygen-modulated hafnium oxide material is used, then programming voltage is reduced, but the device structure becomes more complex

Engineering Contradiction:

Improveprogramming efficiencyVSAvoidmaterial composition complexity

Core Design Contradiction:

ProductivityVSDevice complexity

Solution Approach 1:

The patent applies local quality by creating regions with different oxygen concentrations within the hafnium oxide layer. Specifically, it forms a first region with a first oxygen concentration and a second region with a second oxygen concentration that differs from the first. This spatial variation in compositional properties enables different functional zones that facilitate conductive filament formation at lower voltages, thus improving programming efficiency while maintaining a relatively simple overall device structure.

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The patent implements parameter changes by modifying the oxygen concentration parameter within the hafnium oxide material. By controlling the oxygen concentration to vary spatially (creating regions with different oxygen levels), the material's electrical properties are changed to enable more efficient programming. This parameter modulation allows the device to achieve the desired functionality without requiring high programming voltages.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables resistive memory devices to be programmed and erased at lower voltages, improving the efficiency and reliability of data storage operations.

Implementation Method 1

forming hafnium oxide resistive memory material portions having a lateral compositional modulation in oxygen on the hafnium pillars

Methodology Applied

Scientific EffectCompositional modulation:

Implementation Method 2

a hafnium oxide resistive material portion of a resistive memory cell located between the first electrode and the second electrode and having a compositional modulation in oxygen concentration within directions that are perpendicular to the spacing direction

Methodology Applied

Scientific EffectOxygen concentration variation:

Data Source

PatentUS10516105B2Resistive memory device containing oxygen-modulated hafnium oxide material and methods of making thereof

Publication Date: 2019.12.24 SANDISK TECHNOLOGIES LLC

AI summary

A resistive memory device includes a first electrode, a second electrode spaced from the first electrode along a spacing direction, and a hafnium oxide resistive material portion of a resistive memory cell located between the first electrode and the second electrode and having a compositional modulation in oxygen concentration within directions that are perpendicular to the spacing direction.