Voltage Pumping Circuits with Common Control Unit

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Solution Overview

Problem

Semiconductor apparatuses face challenges in generating internal voltages greater than external voltages, requiring high voltage generation circuits and switching elements that result in voltage drops, making it difficult to further lower external voltage levels while maintaining efficient operation.

Innovation Solution

A semiconductor apparatus with a common control unit generating a single control signal for multiple high voltage switching circuits, eliminating the need for individual control circuits and optimizing area efficiency by using depletion high voltage NMOS and PMOS switching elements to boost voltage levels efficiently.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of operation

If multiple individual control circuits are used for each high voltage switching circuit, then each switching circuit can be controlled independently, but the area occupancy increases significantly

Engineering Contradiction:
ImproveIndependent control capabilityVSAvoidArea occupancy
Core Design Contradiction:
Ease of operationVSArea of stationary object

Solution Approach 1:

The patent combines multiple individual control circuits into a single common control unit that generates one control signal. This control signal is then distributed to multiple high voltage switching circuits, allowing independent control functionality to be achieved while significantly reducing the area occupied by control circuits.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The common control unit is designed to serve multiple high voltage switching circuits simultaneously. By making the control unit universal and capable of controlling multiple switching circuits with a single control signal, the patent reduces redundancy and minimizes area occupancy while maintaining independent control capability.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Device complexity

If conventional switching elements are used, then the circuit design is simple, but voltage drops occur during high voltage transfer

Engineering Contradiction:
ImproveCircuit design simplicityVSAvoidVoltage drop
Core Design Contradiction:
Device complexityVSLoss of energy

Solution Approach 1:

The patent changes the parameters of the switching elements by using depletion type high voltage NMOS and PMOS transistors with specific threshold voltages. These parameter changes enable the switching elements to operate with minimal voltage drop during high voltage transfer, while maintaining relatively simple circuit design.

Inventive Principle:
Principle #35Parameter changes

3Use of energy by stationary object

If external voltage is lowered to reduce power consumption, then power consumption decreases, but internal voltage generation becomes more difficult

Engineering Contradiction:
ImprovePower consumptionVSAvoidInternal voltage generation
Core Design Contradiction:
Use of energy by stationary objectVSEase of manufacture

Solution Approach 1:

The patent uses depletion type high voltage switching elements with specific threshold voltage parameters that enable efficient voltage pumping even when the external voltage is lowered. This parameter selection allows the pumping circuit to generate the required internal high voltage while operating from lower external voltage, thus reducing power consumption without compromising voltage generation capability.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution reduces area occupancy and minimizes voltage drops, enabling efficient high voltage transfer and maintaining operational efficiency even as external voltage levels decrease, thereby improving the overall performance of semiconductor memory systems.

Implementation Method 1

a plurality of high voltage switching circuits operable in response to a single control signal, and suitable for pumping a voltage level of a switching signal to a target level based on the voltage level of the switching signal

Methodology Applied
Scientific EffectVoltage pumping:

Data Source

PatentUS9754663B1Apparatus for switching voltage and semiconductor memory apparatus having the same
Publication Date: 2017.09.05 SK HYNIX INC
  • US9754663B1 patent drawing
  • US9754663B1 patent drawing
  • US9754663B1 patent drawing

AI summary

A voltage switching apparatus includes a plurality of high voltage switching circuits operable in response to a single control signal, and suitable for pumping a voltage level of a switching signal to a target level based on the voltage level of the switching signal and a common control unit suitable for generating the single control signal.