Multi-Stacked Quantum Well Light-Emitting Element Reduces Substrate Cost
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Solution Overview
Problem
The high cost of LED manufacturing is largely attributed to the expense of substrates, as traditional light-emitting elements require multiple substrates, which increases production costs.
Innovation Solution
A light-emitting element design featuring multiple stacked layers on a single substrate, where the first active layer comprises alternately stacked quantum wells with varying band gaps, allowing for efficient light emission with reduced substrate usage, and a second active layer generates light of a different wavelength, enabling dual functionality in a single device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If multiple substrates are used for light-emitting elements, then light-emitting efficiency is maintained, but manufacturing cost increases
Solution Approach 1:
The patent combines multiple light-emitting stacked layers on a single substrate, merging functions that traditionally required separate substrates. This reduces substrate quantity and manufacturing cost while maintaining light-emitting efficiency through the stacked layer configuration.
Solution Approach 2:
The single substrate supports multiple light-emitting stacked layers with different band gaps, enabling the substrate to serve multiple light-emitting functions simultaneously. This multi-functional approach eliminates the need for multiple specialized substrates.
2Ease of manufacture
If multiple light-emitting stacked layers are stacked on a single substrate, then substrate cost is reduced, but device complexity increases
Solution Approach 1:
The patent segments the light-emitting function into multiple stacked layers with different band gaps, where each layer is responsible for emitting light at a specific wavelength range. This segmentation allows independent optimization of each layer while sharing the common substrate, reducing overall complexity compared to multiple separate devices.
Solution Approach 2:
The patent transitions from a planar single-layer structure to a vertical stacked multi-layer structure. By adding the vertical dimension, multiple light-emitting functions are achieved within the same footprint area, reducing substrate requirements while organizing complexity in a structured vertical arrangement.
3Loss of energy
If quantum wells with small band gap difference are used, then light-emitting efficiency is improved, but wavelength range is limited
Solution Approach 1:
The patent applies local quality by creating quantum wells with different band gaps at different vertical positions in the stacked layers. Each quantum well is optimized for its specific location and function, with band gap differences of 0.06-0.1eV within each layer for efficiency, while the overall stack provides broad wavelength coverage through varied band gaps across layers.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design maintains light-emitting efficiency comparable to conventional elements while reducing substrate costs and enabling multiple light emission wavelengths for diverse applications, such as medical treatments.
Implementation Method 1
the first active layer comprises a first quantum well comprising a first quantum-well band gap and a second quantum well comprising a second quantum-well band gap, and the first quantum well and the second quantum well are alternately stacked to form the first active layer
Implementation Method 2
When imposing a certain level of forward voltage to the p-n junction, holes from the p-type semiconductor layer and electrons from the n-type semiconductor layer are combined to release light
Data Source
AI summary
A light-emitting element, comprises: a first active layer, generating a first light comprising a first dominant wavelength, wherein the first active layer comprises a first quantum well comprising a first quantum-well band gap and a second quantum well comprising a second quantum-well band gap, and the first quantum well and the second quantum well are alternately stacked to form the first active layer, wherein a difference between the first quantum-well band gap and the second quantum-well band gap is between 0.06eV and 0.1eV, and each of the first quantum-well and the second quantum-well is devoid of a barrier; and a second active layer on the first active layer, generating a second light comprising a second dominant wavelength; wherein a difference between the first dominant wavelength and the second dominant wavelength is 150nm to 220nm.