SOI Substrate Harmonic Suppression via Ion Implantation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor-on-insulator substrates fail to effectively suppress multiple order radio frequency harmonics, which is crucial for radio frequency integrated circuit applications, as they typically do not achieve the desired 30 to 40 decibel suppression of harmonics like second or third order harmonics.
Innovation Solution
A semiconductor-on-insulator substrate is fabricated with a multiple order radio frequency harmonic suppressing region formed by ion implanting specific ions beneath the buried dielectric layer within the base semiconductor substrate, creating a region with a different composition that suppresses harmonics by at least 30 dB.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional semiconductor-on-insulator substrate structure is used, then the fabrication process is simple and the structure is easy to manufacture, but multiple order radio frequency harmonics are not sufficiently suppressed
Solution Approach 1:
The patent applies local quality by creating a specific doped region within the base semiconductor substrate at a defined depth below the buried dielectric layer interface. This localized doped region has different electrical properties (doping concentration) compared to the surrounding substrate, providing harmonic suppression functionality only in the specific location where it is needed, while leaving the rest of the substrate structure simple and conventional.
Solution Approach 2:
The patent utilizes parameter changes by modifying the doping concentration parameter in a specific region of the base semiconductor substrate. By controlling the doping concentration (e.g., 1E16 to 1E19 atoms/cm³) in the harmonic suppressing region, the electrical characteristics of that region are changed to achieve harmonic suppression, while other regions maintain their original parameters and properties.
2Reliability
If ion implantation is used to form a harmonic suppressing region, then multiple order radio frequency harmonics are suppressed by at least 30 dB, but the fabrication process becomes more complex and requires additional processing steps
Solution Approach 1:
The patent applies preliminary action by performing ion implantation to create the doped region before forming the buried dielectric layer. This sequencing allows the harmonic suppressing region to be established in advance, and subsequent processing steps (dielectric layer formation, surface layer fabrication) can proceed without additional complex operations. The preliminary doping step is integrated into the existing fabrication flow rather than being added as a separate post-processing operation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The approach results in enhanced suppression of multiple order radio frequency harmonics, improving the performance of radio frequency devices and circuits by reducing harmonic interference, as demonstrated in radio frequency switch circuits with reduced insertion loss and improved harmonic suppression.
Implementation Method 1
forming (i.e., typically by ion implanting) a multiple order radio frequency harmonic suppressing region within a base semiconductor substrate at a location beneath an interface of a buried dielectric layer with the base semiconductor substrate
Data Source
AI summary
A semiconductor-on-insulator substrate and a related semiconductor structure, as well as a method for fabricating the semiconductor-on-insulator substrate and the related semiconductor structure, provide for a multiple order radio frequency harmonic suppressing region located and formed within a base semiconductor substrate at a location beneath an interface of a buried dielectric layer with the base semiconductor substrate within the semiconductor-on-insulator substrate. The multiple order radio frequency harmonic suppressing region may comprise an ion implanted atom, such as but not limited to a noble gas atom, to provide a suppressed multiple order radio frequency harmonic when powering a radio frequency device, such as but not limited to a radio frequency complementary metal oxide semiconductor device (or alternatively a passive device), located and formed within and upon a surface semiconductor layer within the semiconductor structure.