Semiconductor Fin Structure with Inter-Fin Connection for Thermal Management
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor devices using silicon-on-insulator (SOI) substrates face challenges in heat release efficiency due to low thermal conductivity of the buried oxide layer, leading to increased device temperature and deteriorated operational characteristics, as well as difficulties in optimizing NMOS and PMOS transistors with varying crystal directions.
Innovation Solution
A semiconductor device structure featuring semiconductor fins with different crystal directions, an insulating layer, and an inter-fin connection member that connects these fins, allowing for efficient heat release and optimized transistor performance by aligning crystal orientations and using epitaxial growth to enhance mobility and operational characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If SOI substrate with buried oxide layer is used, then device isolation and electrical stability are improved, but heat release efficiency deteriorates due to low thermal conductivity
Solution Approach 1:
The semiconductor device is divided into multiple fins (first semiconductor fin and second semiconductor fin) with different crystal directions, allowing heat dissipation through multiple pathways and orientations, which improves overall heat release efficiency while maintaining the SOI substrate's electrical isolation benefits
Solution Approach 2:
The device utilizes composite structure combining SOI substrate with embedded semiconductor fins of different crystal orientations, creating a hybrid architecture that leverages both the electrical stability of SOI and the enhanced thermal management capabilities of anisotropic crystal structures
2Ease of manufacture
If single crystal silicon substrate is used, then manufacturing process is simplified, but difficulty in optimizing both NMOS and PMOS transistors simultaneously increases due to varying carrier mobility requirements
Solution Approach 1:
Different regions of the semiconductor device are assigned different crystal directions: the first semiconductor fin has crystal direction optimized for NMOS transistors (e.g., <110> for electron mobility), while the second semiconductor fin has crystal direction optimized for PMOS transistors (e.g., <100> for hole mobility), allowing each transistor type to achieve optimal performance in its designated region
Solution Approach 2:
The solution transitions from a planar single-crystal substrate to a three-dimensional fin structure with varying crystal orientations, adding the dimension of spatial orientation control to simultaneously optimize both NMOS and PMOS characteristics on the same substrate
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution effectively addresses heat management and transistor optimization, improving operational characteristics by aligning crystal directions and using epitaxial growth to enhance mobility, thus achieving better thermal management and performance for NMOS and PMOS transistors.
Implementation Method 1
using epitaxial growth to enhance mobility and operational characteristics
Data Source
AI summary
Provided are a semiconductor device, and a method of forming the same. In one embodiment, the semiconductor device includes a semiconductor layer, first and second semiconductor fins, an insulating layer, and an inter-fin connection member. The first and second semiconductor fins are placed on the semiconductor layer, and have different crystal directions. The first semiconductor fin is connected to the semiconductor layer, and has the equivalent crystal direction as that of the semiconductor layer. The insulating layer is interposed between the second semiconductor fin and the semiconductor layer, and has an opening in which the first semiconductor fin is inserted. The inter-fin connection member connects the first semiconductor fin and the second semiconductor fin together on the insulating layer.