Component Carrier Etching Neck for Stub-Free Via Back Drilling
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Solution Overview
Problem
Component carriers face challenges in managing heat removal and parasitic effects during high-frequency signal propagation, leading to degraded performance, particularly in mobile communication systems, due to the presence of parasitic stubs and uncontrolled burrs in drilling processes.
Innovation Solution
The implementation of a back drill hole with an etching neck to reduce parasitic stub length by forming a locally narrowed extension through etching, ensuring precise control and eliminating burrs, thereby maintaining electrical reliability and improving high-frequency performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a back drill hole is created to remove parasitic stubs, then high-frequency signal performance is improved, but uncontrolled burrs are generated in the drilling process
Solution Approach 1:
The patent applies chemical etching to precisely control the depth and shape of the back drill hole, transforming the uncontrolled mechanical drilling process into a controlled chemical process. This allows the etching neck to precisely reach the trace level without generating burrs, resolving the contradiction between removing parasitic stubs and avoiding harmful byproducts
Solution Approach 2:
The patent replaces the mechanical drilling process with a chemical etching process for creating the back drill hole and etching neck. This substitution eliminates the mechanical burr generation problem while maintaining the ability to remove parasitic stubs, thereby improving high-frequency signal performance without generating harmful burrs
2Object-generated harmful factors
If the back drill hole extends close to the trace level to minimize stub length, then parasitic effects are reduced, but the risk of damaging the trace increases
Solution Approach 1:
The patent uses chemical etching with controlled parameters to precisely regulate the depth and shape of the back drill hole. The etching process can be precisely controlled to stop exactly at the trace level, minimizing parasitic stub length while preventing trace damage through controlled chemical reaction rates and etching depth parameters
Solution Approach 2:
The patent introduces an etching neck as an intermediary structure between the back drill hole and the trace. This neck portion acts as a buffer zone that allows the back drill hole to extend close to the trace level without directly contacting or damaging the trace, thereby reducing parasitic effects while maintaining electrical connection integrity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances signal quality and reduces signal loss by eliminating parasitic stubs and burrs, ensuring stable and repeatable high-frequency performance, suitable for applications up to 100 GHz, including 5G and beyond.
Implementation Method 1
forming a locally narrowed extension, in particular an etching neck, in the back drill hole towards an end portion of the vertical through-connection
Data Source
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AI summary
A component carrier (100) which comprises a stack (102) comprising a plurality of electrically conductive layer structures (104) and at least one electrically insulating layer structure (106), wherein the electrically conductive layer structures (104) comprise an electrically conductive vertical through-connection (108) and a horizontally extending electrically conductive trace (110) electrically coupled with an end portion (116) of the vertical through-connection (108), a back drill hole (112) extending through at least part of the at least one electrically insulating layer structure (106) towards the end portion (116), and an etching neck (114) connecting the back drill hole (112) with the end portion (116) of the vertical through-connection (108).