Metal Matrix Composite Backside Layer for IC Heat Dissipation
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Solution Overview
Problem
The challenge of thermal management in integrated circuit devices is exacerbated by the mismatch in thermal expansion coefficients between silicon and metal films, leading to potential cracking and failure, while existing thermal interface materials have lower thermal conductivity than silicon, creating a thermal bottleneck.
Innovation Solution
A metal matrix composite layer with a filler material, such as graphitic carbon or diamond particles, is formed on the integrated circuit device using coldspray additive manufacturing to reduce thermal expansion mismatch, ensuring high thermal conductivity without damaging the device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If metal films with high thermal conductivity are deposited directly on the integrated circuit device, then thermal management is improved, but thermomechanical stresses cause cracking and device failure
Solution Approach 1:
The patent applies composite materials by creating a metal matrix composite layer containing dispersed filler particles (such as diamond, cubic boron nitride, or silicon carbide) within a metal matrix. This composite structure combines the high thermal conductivity of the metal matrix with the low CTE and high thermal conductivity of the filler particles, achieving both improved heat dissipation and reduced thermomechanical stresses through the CTE mismatch between the composite layer and the silicon device.
2Temperature
If thermal interface materials are used to transfer heat, then heat transfer path is provided, but thermal conductivity is lower than silicon creating a thermal bottleneck
Solution Approach 1:
The patent extracts the thermal interface material from the system by depositing the metal matrix composite layer directly onto the backside of the integrated circuit device, eliminating the need for separate thermal interface materials. This direct deposition creates an integrated thermal management solution that removes the thermal bottleneck caused by intermediate materials with lower thermal conductivity.
3Ease of manufacture
If conventional deposition techniques are used to form metal films, then metal films are deposited, but high-temperature sintering damages the integrated circuit device
Solution Approach 1:
The patent applies parameter changes by using low-temperature deposition techniques (such as sputtering, evaporation, or chemical vapor deposition) instead of conventional high-temperature sintering methods. This allows the metal matrix composite layer to be formed at temperatures that do not damage the integrated circuit device, while still achieving adequate bonding and thermal conductivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces thermomechanical stresses and enhances thermal conductivity, preventing cracking and improving heat dissipation in integrated circuit devices.
Implementation Method 1
the thermal interface material provides a heat transfer path from the integrated circuit device(s) to the heat dissipation device
Implementation Method 2
a metal matrix composite layer having a filler material to reduce coefficient of thermal expansion mismatch
Data Source
AI summary
An integrated circuit assembly may be fabricated to include an integrated circuit device having a backside surface and a metal matrix composite layer on the backside surface, wherein the metal matrix composite layer has a filler material disposed therein to reduce the coefficient of thermal expansion thereof. The filler material may be a plurality of graphitic carbon filler particles, wherein the plurality of graphitic carbon filler particles has an average aspect ratio of greater than about 10, or the filler material may be a plurality of diamond particles, wherein the filler material is clad with a metal material.