Composite Component Heat Dissipation via Side Electrodes
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Solution Overview
Problem
The stacking of elastic wave devices and semiconductor devices leads to heat-related issues, such as electrochemical migration and electrode breakage due to heat generated by both components, which deteriorates their characteristics.
Innovation Solution
A composite component design with a piezoelectric substrate and a semiconductor substrate stacked such that their side electrodes are connected to a common ground potential, and a metal layer is used between them for enhanced heat dissipation, along with a heat insulation layer to reduce heat conduction between the devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If an elastic wave device and a semiconductor device are stacked to reduce device size, then integration density is improved, but heat accumulation increases causing electrochemical migration and electrode breakage
Solution Approach 1:
The patent introduces side electrodes that extend from side surfaces of the piezoelectric substrate to side surfaces of the semiconductor substrate, utilizing the lateral dimension for heat dissipation. This three-dimensional electrode configuration creates additional heat conduction pathways in the lateral direction, effectively managing heat accumulation while maintaining the compact stacked structure.
Solution Approach 2:
The side electrodes act as intermediary heat conduction elements between the piezoelectric substrate and semiconductor substrate. These electrodes provide dedicated thermal conduction paths that mediate heat transfer from heat-generating regions to heat dissipation regions, preventing excessive temperature rise that would cause electrochemical migration and electrode breakage.
2Temperature
If heat dissipation structures are added to manage thermal issues, then temperature control is improved, but device complexity increases
Solution Approach 1:
The side electrodes perform multiple functions simultaneously: they provide electrical connection between the IDT electrode and functional electrode, establish common ground potential for electrical stability, and serve as heat conduction pathways for thermal management. This multi-functionality achieves temperature control without adding separate dedicated heat dissipation structures.
Solution Approach 2:
The patent merges the electrical connection function and heat dissipation function into a single integrated electrode structure. The side electrodes combine the roles of electrical conductors and thermal conductors, eliminating the need for separate heat sink structures and reducing overall device complexity while achieving effective temperature control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design significantly increases the heat dissipation ability, preventing heat-related deterioration of the devices' characteristics and maintaining electrical stability by rapidly releasing heat generated by both the elastic wave and semiconductor devices.
Implementation Method 1
a side electrode that extends from at least one of the plurality of side surfaces of the piezoelectric substrate to at least one of the plurality of side surfaces of the semiconductor substrate
Implementation Method 2
a metal layer is disposed between the first main surface of the piezoelectric substrate and the first main surface of the semiconductor substrate
Implementation Method 3
a heat insulation layer to reduce heat conduction between the devices
Data Source
AI summary
In a composite component, a semiconductor device is stacked on an elastic wave device. Side electrodes extend from at least one side surface of a piezoelectric substrate of the elastic wave device to at least a side surface of a semiconductor substrate of the semiconductor device and are connected to an IDT electrode and functional electrodes. The side electrodes extend onto at least one of a second main surface of the piezoelectric substrate and a second main surface of the semiconductor substrate.