Composite Dielectric Capacitor Structure for Miniaturized Semiconductors
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Solution Overview
Problem
The challenge in semiconductor devices is to optimize the structure of miniaturized capacitors for improved electrical properties and reliability, particularly in high integration density and miniaturization, where existing designs face limitations in dielectric material performance and capacitor efficiency.
Innovation Solution
A semiconductor device is designed with a dielectric structure comprising a first and second dielectric film, where the second dielectric film is disposed within the grain boundaries of the first dielectric film, enhancing the dielectric constant and electrical reliability by increasing the contact area and crystallization of the second material, such as hafnium oxide, to match the crystallized zirconium oxide, forming a layered structure between the electrodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a single dielectric material is used in the capacitor, then the manufacturing process is simple, but the dielectric constant and electrical reliability are insufficient for miniaturized capacitors
Solution Approach 1:
The patent employs a composite dielectric structure consisting of a first dielectric film (e.g., zirconium oxide) and a second dielectric film (e.g., hafnium oxide) with different materials and properties. This composite approach enables the capacitor to achieve higher dielectric constant and improved electrical reliability while maintaining compatibility with miniaturization requirements, directly resolving the contradiction between reliability and structural complexity.
2Productivity
If the capacitor size is reduced for high integration density, then the integration density increases, but the dielectric performance and electrical properties deteriorate
Solution Approach 1:
By using composite dielectric films with different materials (e.g., zirconium oxide and hafnium oxide), the patent achieves high dielectric constant in miniaturized capacitors, enabling high integration density without sacrificing electrical performance.
Solution Approach 2:
The patent applies different dielectric materials in specific regions and configurations (layered structure, grain boundary filling) to optimize local electrical properties. This local quality approach ensures that even in miniaturized capacitors, the critical electrical properties are maintained through targeted material placement and structural design.
3Volume of moving object
If the dielectric film thickness is reduced to miniaturize the capacitor, then the capacitor size decreases, but the dielectric constant and electrical reliability decrease
Solution Approach 1:
The patent uses composite dielectric films where high-k materials (hafnium oxide) are combined with other dielectric materials (zirconium oxide). This composite structure achieves high dielectric constant even when the overall film thickness is reduced, enabling miniaturization without sacrificing electrical reliability.
Solution Approach 2:
The patent changes the dielectric constant parameter by introducing high-k materials and optimizing the layered structure. By adjusting material composition and structural configuration rather than simply increasing thickness, the patent achieves high dielectric constant in thin-film miniaturized capacitors.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves the electrical properties and reliability of the semiconductor device by increasing the dielectric constant and facilitating desirable crystallization of the second dielectric film, leading to enhanced capacitor performance and integration density.
Implementation Method 1
depositing a second dielectric film having a second material different from the first material on the first dielectric film to form a layered dielectric structure in which a portion of the second dielectric film with the second material fills the opening
Implementation Method 2
facilitating desirable crystallization of the second dielectric film, leading to enhanced capacitor performance
Data Source
AI summary
A semiconductor device includes a lower structure; a lower electrode on the lower structure; an upper electrode covering the lower electrode on the lower structure; and a dielectric structure disposed between the lower electrode and the upper electrode. The dielectric structure includes a first dielectric film including a first material and a second dielectric film including a second material different from the first material. The first dielectric film includes a first surface in contact with or facing the lower electrode and a second surface facing the first surface. The second dielectric film includes a first portion disposed in an opening of the first dielectric film and extending in a direction from the second surface toward the first surface.