Composite Dielectric Electrode Structure for Leakage Suppression
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The complexity of semiconductor device manufacturing leads to issues such as short circuits and leakage current between conductive features, necessitating an improvement in the manufacturing process to enhance device performance and integration.
Innovation Solution
A semiconductor device is formed with a composite dielectric structure comprising a second dielectric layer and dielectric portions over a first dielectric layer, covering top corners of an opening and extending partially along the sidewalls, which separates the top and bottom electrodes, preventing or reducing leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If manufacturing operations are increased for integration of semiconductor devices, then device functionality and integration are improved, but short circuit and leakage current between neighboring conductive features occur
Solution Approach 1:
The dielectric structure is segmented into multiple components: a first dielectric layer providing base insulation, and a second dielectric layer forming protruding portions at corners and along sidewalls. This segmentation allows each layer to perform specialized functions - the first layer provides general insulation while the second layer specifically addresses leakage at critical locations, thereby reducing leakage current without compromising device functionality
Solution Approach 2:
The second dielectric layer is strategically positioned only at corner regions and along sidewalls where leakage current is most likely to occur. This localized approach concentrates insulation resources at critical points rather than uniformly throughout the structure, effectively addressing leakage issues while maintaining manufacturing feasibility and device performance
2Reliability
If dielectric structure extends along sidewalls and covers top corners, then leakage current is reduced, but manufacturing complexity increases
Solution Approach 1:
The first dielectric layer is formed completely covering the conductive contact before the opening is etched. This preliminary action establishes a uniform base insulation layer that simplifies subsequent processing. The second dielectric layer is then deposited to form protruding portions, building upon the already-formed first layer, which reduces manufacturing complexity compared to forming the complete composite structure in a single step
3Reliability
If composite dielectric structure is formed with multiple layers, then leakage current is reduced, but manufacturing steps increase
Solution Approach 1:
The formation of the composite dielectric structure merges two dielectric layers into a unified insulation system. The first dielectric layer and second dielectric layer are deposited in sequence and collectively provide enhanced insulation performance. This merging approach achieves superior leakage current reduction while consolidating the manufacturing process into an integrated two-step deposition sequence, improving efficiency compared to using multiple separate insulation structures
Data Source
AI summary
A method for forming a semiconductor device includes forming a conductive contact over a semiconductor substrate, and forming a first dielectric layer covering the conductive contact. The method also includes partially removing the first dielectric layer to form an opening exposing a top surface of the conductive contact, and forming a bottom electrode covering sidewalls of the opening and the top surface of the conductive contact. The method further includes depositing a second dielectric layer over the bottom electrode using a first process, and depositing dielectric portions over the second dielectric layer and at top corners of the opening using a second process. The first process has a first step coverage, the second process has a second step coverage, and the second step coverage is smaller than the first step coverage. The method includes forming a top electrode covering the second dielectric layer and the dielectric portions.