Composite Hard Mask for Ultra-Thin MR Sensor Patterning

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Solution Overview

Problem

Conventional fabrication processes for magnetic sensors like MR sensors face challenges in scaling down sensor size and thickness due to issues like local dishing and long-tail formation, which affect performance and scalability.

Innovation Solution

A composite hard mask comprising a first sacrificial layer of amorphous carbon or silicon nitride and a second sacrificial layer of silicon nitride, silicon oxide, metal, metal oxide, or metal nitride, which allows for improved process integration and precise patterning, enabling the scaling down of MR sensor size and thickness.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional fabrication processes are used for MR sensors, then the manufacturing process is simple, but the sensor cannot be scaled down to ultra-fine critical dimensions and ultra-thin thickness

Engineering Contradiction:
Improvecritical dimension and thickness controlVSAvoidfabrication process complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The hard mask is divided into two distinct layers: a first sacrificial hard mask layer (amorphous carbon or silicon nitride, 10-150 Å thick) and a second sacrificial hard mask layer (silicon nitride, silicon oxide, metal, metal oxide, or metal nitride, 20-800 Å thick). This segmentation allows each layer to serve specific functions in the fabrication process, enabling precise control of ultra-fine critical dimensions (20 nm or less) and ultra-thin sensor thickness (15 nm or less) while managing process complexity through specialized removal steps for each layer.

Inventive Principle:
Principle #1Segmentation

2Manufacturing precision

If the first and second sacrificial hard mask layers are made of the same material, then the manufacturing process is simpler, but selective removal cannot be achieved to enable precise patterning

Engineering Contradiction:
Improvepatterning precisionVSAvoidmask layer fabrication simplicity
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The patent applies local quality by making the first and second sacrificial hard mask layers different materials with distinct removal characteristics. The first layer (amorphous carbon or silicon nitride) and second layer (silicon nitride, silicon oxide, metal, metal oxide, or metal nitride) can be selectively removed using different etching processes, allowing precise patterning control at different stages of MR sensor fabrication without complicating the overall manufacturing approach.

Inventive Principle:
Principle #3Local quality

3Reliability

If single-layer hard masks are used, then the process integration is simpler, but local dishing and long-tail issues occur that affect sensor performance

Engineering Contradiction:
Improvesensor performanceVSAvoidhard mask structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent employs composite materials by combining two different sacrificial hard mask layers with complementary properties. The first layer (amorphous carbon or silicon nitride, 10-150 Å) and second layer (silicon nitride, silicon oxide, metal, metal oxide, or metal nitride, 20-800 Å) work together to eliminate local dishing and long-tail formation issues during ion beam etching, ensuring reliable sensor performance while maintaining reasonable process integration complexity.

Inventive Principle:
Principle #40Composite materials

Data Source

PatentUS20230258747A1Composite Hard Masks For Ultra-Thin Magnetic Sensors
Publication Date: 2023.08.17 HEADWAY TECHNOLOGIES INC
  • US20230258747A1 patent drawing
  • US20230258747A1 patent drawing
  • US20230258747A1 patent drawing

AI summary

A composite hard mask is disclosed. In some embodiments, a first sacrificial hard mask layer comprising an amorphous carbon or silicon nitride and a second sacrificial hard mask layer comprising a silicon nitride, silicon oxide, metal, metal oxide, or metal nitride, wherein the first and second sacrificial hard mask layers are not made of the same material.