Computational Memory Storage Array Segmentation

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Existing memory systems face inefficiencies as dual port SRAM cells are larger than high-density memories, making it inefficient to store data in computational memory cells, which are also used for logic operations, limiting their capacity for complex computations and data storage.

Innovation Solution

A processing array with an array of computational dual port SRAM cells connected to a storage array, utilizing error checking circuitry and multiplexers to perform complex logic functions and store data efficiently, allowing for operations like XOR and XNOR computations while minimizing cell size limitations.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If dual port SRAM cells are used for computational memory operations, then logic computation capability is improved, but storage capacity deteriorates due to larger cell size compared to high-density memories

Engineering Contradiction:
Improvelogic computation capabilityVSAvoidstorage capacity
Core Design Contradiction:
Adaptability or versatilityVSQuantity of substance

Solution Approach 1:

The system is divided into two distinct segments: computational memory cells (dual port SRAM) dedicated to logic operations, and separate high-density storage cells for data retention. This segmentation allows each component to be optimized for its specific function without compromise

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The dual port SRAM cells serve multiple functions: they act as both computational units for logic operations and as temporary storage registers. The separate high-density memory provides universal data storage capability, creating a multi-functional memory system

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Quantity of substance

If dual port SRAM cells are used to store data, then data storage is enabled, but efficiency deteriorates due to significantly larger cell size

Engineering Contradiction:
Improvedata storageVSAvoidstorage efficiency
Core Design Contradiction:
Quantity of substanceVSProductivity

Solution Approach 1:

The memory system is segmented into computational SRAM cells and separate high-density storage cells. The storage cells handle data retention while the SRAM cells handle computation, optimizing both functions independently

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The dual port SRAM cells act as intermediary structures between the high-density storage and the computational logic. They temporarily hold data during computation and facilitate efficient data transfer without requiring the high-density storage to directly participate in logic operations

Inventive Principle:
Principle #24Intermediary (Mediator)

3Adaptability or versatility

If computational memory cells are used for both computation and storage, then functionality is improved, but cell size limitations worsen processing capabilities

Engineering Contradiction:
Improvefunctional capabilityVSAvoidcell size constraints
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The system separates computation and storage into different physical structures with different cell sizes. High-density storage cells handle data retention while smaller computational SRAM cells handle logic operations, eliminating the cell size bottleneck for computation

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The architecture adds a temporal dimension to data handling by using the dual port SRAM as a buffer between storage and computation. Data moves from high-density storage to SRAM for processing, then back to storage, creating a multi-stage data flow that overcomes cell size limitations

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Data Source

PatentUS11227653B1Storage array circuits and methods for computational memory cells
Publication Date: 2022.01.18 GSI TECHNOLOGY INC
  • US11227653B1 patent drawing
  • US11227653B1 patent drawing
  • US11227653B1 patent drawing

AI summary

A storage array for computational memory cells formed as a memory/processing array provides storage of the data without using the more complicated computational memory cells for storage. The storage array may have multiple columns of the storage cells coupled to a column of the computational memory cells. The storage array may have ECC circuitry.