Concentric Rectangular Diode for Leakage Current Reduction

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Conventional charge pump diodes experience inefficiencies due to leakage current when forward-biased, which negatively impacts the efficiency of charge pumping in semiconductor chips, particularly in biochips that detect and analyze biological signals.

Innovation Solution

A diode structure with a multiple-concentric-rectangular-ring configuration, featuring specific doping regions and isolation structures, is designed to minimize leakage current and enhance forward current flow by optimizing the aspect ratio and electrical connections between doping regions.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a conventional diode structure is used in a charge pump, then the device is simple to manufacture, but leakage current increases and forward current decreases

Engineering Contradiction:
Improvediode performanceVSAvoiddiode structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The diode structure is segmented into multiple functional regions including a first doping region, a second doping region, a third doping region, and multiple isolation structures arranged in a quadruple-concentric-rectangular-ring configuration. This segmentation creates distinct functional zones that separately optimize forward current flow and leakage current blocking, resolving the contradiction between diode performance and structural simplicity.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different regions of the diode are assigned different doping types and concentrations to create locally optimized properties. The first doping region has a first conductivity type while the second and third doping regions have opposite conductivity types, creating localized electrical characteristics that maximize forward current in specific paths while minimizing leakage current in other paths.

Inventive Principle:
Principle #3Local quality

2Power

If the aspect ratio of the first doping region is increased, then forward current increases, but manufacturing precision requirements increase

Engineering Contradiction:
Improveforward currentVSAvoidaspect ratio control
Core Design Contradiction:
PowerVSManufacturing precision

Solution Approach 1:

The diode employs a composite doping structure with multiple doping regions of different conductivity types arranged in a specific geometric pattern. This composite approach allows the aspect ratio of the first doping region to be optimized for maximum forward current while the surrounding isolation structures and additional doping regions compensate for manufacturing variations, reducing the overall precision requirements.

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The diode structure achieves a significant reduction in leakage current and an increase in forward current, leading to improved performance and efficiency in charge pumping applications, particularly in biochips where biological signals need amplification.

Implementation Method 1

A first doping region is disposed in the substrate, wherein the first doping region has a first conductivity type... A second doping region surrounding the first doping region and having a second conductivity type

Methodology Applied
Scientific EffectElectrical conduction: Conduction (electrical)

Data Source

PatentUS9997643B2Diode structure
Publication Date: 2018.06.12 UNITED MICROELECTRONICS CORP
  • US9997643B2 patent drawing
  • US9997643B2 patent drawing
  • US9997643B2 patent drawing

AI summary

A diode structure includes a rectangular first doping region, and a second doping region surrounds the first doping region wherein the first doping region and the second doping region are separated by a first isolation structure. A third doping region surrounds the second doping region wherein the second doping region and the third doping region are separated by a second isolation structure. The first isolation structure, the second doping region, the second isolation structure and the third doping region are arranged in a quadruple concentric rectangular ring surrounding the first doping region.