Semiconductor Devices TRIZ Cases

A gallium oxide Schottky barrier diode uses a reverse-conductivity semiconductor layer to relax electric field concentration at the anode electrode corner.

An LED package uses an absorbing structure enclosing a reflective structure to manage light paths.

Middle-end-of-line ferroelectric transistor formation enables direct via contact, simplifying routing complexity while relaxing thermal budget constraints.

A heterojunction bipolar transistor uses a segmented collector structure with distinct sub-layers to reduce resistance.

Segmenting the mesa termination and relaxation region maintains high breakdown voltage despite reduced JTE impurity concentration.

Segmented contact electrodes balance current distribution to improve anti-electrostatic discharge capability and luminous efficacy.

Segmenting the InxAlyGa1-x-yN barrier layer manages spontaneous polarization charge, enabling normally-off operation while maintaining low sheet resistance.

Removing the buried semiconductor layer and tunnel junction part exposes the p-type layer, preventing hydrogen incorporation that lowers activation rates.

Segmented p-type regions in a pin diode structure enhance electron flow while suppressing hole injection to reduce reverse current leakage.

Concentric rectangular doping regions isolate leakage paths to boost forward current in charge pump biochips.

Segmented field plates expand depletion layers into termination regions, resolving steep potential gradients that limit breakdown voltage and film continuity.

A second barrier layer with a narrower band gap guides holes into the active layer, resolving low injection efficiency and boosting light intensity.

A semiconductor device design featuring a trench with a thick insulating film and a high-concentration drain region.

A germanium avalanche photodiode uses lateral electrodes contacting doped silicon and germanium regions to reduce operating voltage.

Silicon carbide trench MOSFET uses p+ stopper regions to manage channel leakage current.

A semiconductor avalanche photodiode structure employs a delimiting region to reduce dark current and improve signal-to-noise ratio without lateral etching.

A CSP LED packaging method uses light-blocking glue to prevent yellow circles at the bonding surface.

A germanium electroluminescence device uses an n-type direct bandgap semiconductor electron transport layer to inject electrons into the germanium light-emitting layer.

Annular trench sidewalls align with the {100} crystal plane family to enable uniform silicon epitaxial growth.

Graded aluminum content in LED barrier layers reduces light absorption and efficiency droop, delivering 17.5% higher luminous flux under high current densities.

Segmented branch electrodes connect semiconductor layers through an insulating barrier, reducing operating voltage and light absorption losses.

A semiconductor component uses distinct side and surface phosphor layers to convert blue light into mixed wavelengths for uniform color output.

A GaN HEMT gate trench uses a-plane sidewalls and c-plane bottoms to prevent electric field concentration at terminal parts, enhancing voltage resistance.

A symmetrical quantum well active layer with a central low bandgap delta-layer enhances electron-hole wavefunction overlap.

Vertical diamond pn junctions reduce leakage currents, achieving a 1:1000 spectral ratio for interference-free UV-C detection.

Extracted short region prevents parasitic BJT activation while optimized contact metals reduce on-resistance and maintain blocking voltage.

A light-transmissive layer covers the top surface and extends over the peripheral surface of a micro device epitaxial structure.

A pumping capacitor uses a P-type metal gate and high-k dielectric to enhance capacitance.

Vertical electrode structures enable high surface brightness from a compact footprint by reducing electrical resistance.

A light emitting device package uses convex components and cut-outs to house outer lead electrodes for stable support during manufacturing.

A vertical reconfigurable field effect transistor stacks insulated gate structures to control Schottky junctions independently.

Segmented P-type diffusion regions separate electric field concentration to improve breakdown voltage without increasing on-resistance.

A light emitting device capping layer matches the thermal expansion coefficient of the semiconductor to stabilize the interface.

Segmented doping and a vertical field plate create reduced surface fields, enabling high blocking voltage without increasing cathode-anode length.

Ion implantation creates a resistive region in the LED upper layer to redirect current, preventing light obstruction by the electrode.

Graded refractive indexes in nitride semiconductor layers reduce internal reflection and improve light extraction efficiency.

Segmented inorganic insulating layers block moisture and oxygen penetration while eliminating mask processes to boost manufacturing productivity.

A trench gate configuration avoids source contact corners to prevent stress-induced distortion.

Introducing helium or proton irradiation creates recombination centers that suppress avalanche breakdown caused by neutron interactions in wide bandgap devices.

An antireflective layer with a graded index of refraction minimizes total internal reflection at the substrate interface, increasing transmitted light.

Segmented Schottky contacts with varying barrier heights improve forward conduction while maintaining reverse blocking capability.

First conductive parts trap holes in the second region, reducing current change rates during reverse recovery and preventing parasitic NPN transistor operation.

A vertical MOSFET uses a field plate electrode to promote drift layer depletion and increase impurity concentration for low on-resistance.

A semiconductor light-emitting element uses a covering electrode layer to bury a reflective silver metal layer.

A vertical field effect transistor uses a dual-gate feedback loop to modulate channel potential and accelerate carrier injection.

Protruding the transmissive member from sealing resin exposes the element side, reducing total reflection and improving light extraction efficiency.

A semiconductor device employs a sacrificial layer and protective structure to enable laser lift-off separation of the growth substrate.

An undoped capping layer prevents p-type dopant diffusion into the active layer, maintaining crystal quality and enhancing hole injection efficiency.

A semiconductor dispersion layer distributes charge carriers across the junction plane to enhance light emission.

SInSiN film covers anode electrode ends to increase insulating distance and restrain electric discharge.