Semiconductor Device Conductive Parts for Parasitic Transistor Suppression
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Solution Overview
Problem
The operation of parasitic bipolar transistors in semiconductor devices like MOSFETs poses a risk of device destruction, as they can cause large currents to flow, leading to potential device failure.
Innovation Solution
The semiconductor device design includes multiple first conductive parts separated from each other, which are electrically connected to the source or gate electrode, allowing holes to be trapped and reducing the rate of current change during reverse recovery, thereby minimizing the likelihood of parasitic NPN transistor operation and device destruction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the semiconductor device operates, then current flows through the device, but the parasitic bipolar transistor may operate causing large currents that can destroy the device
Solution Approach 1:
The patent applies preliminary action by providing conductive parts in advance that are capable of trapping holes before the parasitic transistor can operate. These conductive parts are strategically positioned to intercept and trap holes during normal operation, preventing the accumulation of holes that would trigger parasitic transistor activation and subsequent device destruction.
Solution Approach 2:
The conductive parts act as intermediaries between the regions where holes are generated and the parasitic transistor. By introducing these intermediate conductive structures, holes are trapped and neutralized before they can reach the parasitic transistor, thereby mediating the harmful effect and preventing device failure.
2Reliability
If holes are trapped to prevent parasitic transistor operation, then device reliability improves, but the rate of current change during reverse recovery increases
Solution Approach 1:
The patent applies local quality by making the conductive parts selectively conductive in specific regions and conditions. The conductive parts are designed with specific conductivity characteristics that allow them to trap holes effectively during normal operation while minimizing their impact on the overall current flow dynamics during reverse recovery, thus achieving localized hole trapping without globally affecting current speed.
Solution Approach 2:
The patent utilizes parameter changes by designing conductive parts with specific electrical parameters (conductivity, dimensions, positioning) that optimize hole trapping while controlling the impact on current change rate. By carefully adjusting these parameters, the device achieves effective parasitic transistor suppression while maintaining acceptable reverse recovery characteristics.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces the possibility of device destruction by minimizing the rate of current change during reverse recovery, thus preventing the parasitic NPN transistor from operating and ensuring the semiconductor device's integrity.
Implementation Method 1
allowing holes to be trapped and reducing the rate of current change during reverse recovery
Data Source
AI summary
According to one embodiment, a semiconductor device includes first and second electrodes, first, second, and third semiconductor regions, a gate electrode, first, and second conductive parts. The first semiconductor region includes a first region and a second region. The second semiconductor region is provided on the first region. The third semiconductor region is provided on the second semiconductor region. The second electrode is provided on the third semiconductor region. The gate electrode opposes the second semiconductor region in a second direction. The first conductive part is provided on the second region and is provided in a plurality in a third direction. The first conductive parts are arranged with the gate electrode in the second direction. The second conductive part is provided on the second region, and arranged with the gate electrode and the first conductive parts in the third direction.