Schottky Diode Variable Barrier Height Forward Conduction
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Solution Overview
Problem
Traditional methods to improve the forward conduction capacity of Schottky diodes per unit area often lead to increased reverse blocking leakage current, necessitating a semiconductor device that enhances forward conduction without compromising reverse blocking ability.
Innovation Solution
A semiconductor device structure featuring a first electrode layer, a substrate layer, an epitaxy layer with well regions, and a second electrode layer with Schottky contacts of varying barrier heights, including trenches and blind holes, which allows for improved forward conduction while maintaining reverse blocking capability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If traditional methods are used to improve forward conduction capacity per unit area, then forward conduction ability is improved, but reverse blocking leakage current increases
Solution Approach 1:
The patent applies local quality by creating Schottky contacts with different barrier heights in different regions. Specifically, the first Schottky contact region has a first barrier height optimized for forward conduction, while the second Schottky contact region has a second barrier height optimized for reverse blocking. This spatial differentiation of contact properties allows each region to perform its specialized function, resolving the contradiction between forward conduction capacity and reverse blocking leakage current.
Solution Approach 2:
The patent segments the Schottky contact structure into multiple distinct regions with different characteristics. The Schottky contact is divided into a first Schottky contact region and a second Schottky contact region, each with independently optimized barrier heights. This segmentation allows the device to simultaneously achieve high forward conduction in one region while maintaining low reverse leakage in another region, thereby resolving the technical contradiction.
2Object-generated harmful factors
If Schottky contact barrier height is increased to reduce reverse leakage, then reverse blocking ability is improved, but forward conduction capacity decreases
Solution Approach 1:
The patent implements local quality by assigning different barrier height characteristics to different Schottky contact regions. The first Schottky contact region employs a lower barrier height to maximize forward conduction capacity, while the second Schottky contact region uses a higher barrier height to minimize reverse blocking leakage current. This localized optimization of contact properties eliminates the need to compromise either forward conduction or reverse blocking performance.
Solution Approach 2:
The patent segments the Schottky contact into multiple functional regions with different barrier heights. By dividing the contact structure into a first region optimized for forward conduction and a second region optimized for reverse blocking, the patent enables each segment to perform its specialized function without compromising the other, thereby resolving the contradiction between reverse blocking ability and forward conduction capacity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The device achieves enhanced forward conduction ability and energy efficiency without affecting reverse blocking performance, with the varying Schottky contact barrier heights enabling higher electric field intensity and reduced threshold voltage during forward conduction.
Implementation Method 1
a second electrode layer, comprising first metal layers, each disposed between adjacent two of the well regions on the first surface and forms a Schottky contact with the epitaxy layer, wherein the Schottky contact has variable barrier height
Data Source
AI summary
The embodiments of the invention provides a semiconductor device and a method for manufacturing it The semiconductor device provided by the embodiments of the invention comprises: a first electrode layer; a substrate layer positioned on the first electrode layer; an epitaxy layer positioned on the substrate layer and comprising a first surface far from the substrate layer; a plurality of well regions disposed by extending from the first surface into the epitaxy layer and orthographic projections thereof on the first surface are spaced from each other; a second electrode layer, comprising first metal layers, each disposed between adjacent two of the well regions on the first surface and forms a Schottky contact with the epitaxy layer, wherein the Schottky contact has variable barrier height. The semiconductor device provided by the embodiments of the invention may improve the forward conduction ability without affecting the reverse blocking ability.