Semiconductor Anode Electrode Insulation
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Solution Overview
Problem
The existing semiconductor devices are prone to electric discharge between the first anode electrode and the second anode electrode, which is not effectively addressed by current technologies.
Innovation Solution
A semiconductor device configuration where at least the ends of the first and second anode electrodes are covered with a semi-insulated silicon nitride (SInSiN) film, or a resin-based insulating film like polyimide, to increase the insulating distance and prevent electric discharge.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If the first anode electrode and second anode electrode are spaced closely on the semiconductor substrate, then the device area is reduced and integration is improved, but electric discharge may occur between the electrodes
Solution Approach 1:
An insulating film is introduced as an intermediary substance between the first anode electrode and the second anode electrode. This insulating film increases the insulating distance and prevents electric discharge while allowing the electrodes to remain closely spaced, thus resolving the contradiction between small device area and reliable discharge prevention.
Solution Approach 2:
The insulating distance between the electrodes is changed by applying an insulating film, transforming the parameter of electrical isolation. This allows the physical spacing to remain small for area efficiency while the effective insulating distance is increased through the film's thickness and material properties, preventing discharge.
2Reliability
If the insulating distance between the first anode electrode and second anode electrode is increased, then electric discharge is prevented, but the device area increases
Solution Approach 1:
Instead of increasing the insulating distance in the planar dimension (which would increase area), the solution moves to another dimension by applying an insulating film vertically on the electrode surfaces. This increases the effective insulating path length without proportionally increasing the footprint area, as the insulation is provided through film thickness rather than lateral spacing.
Solution Approach 2:
A thin insulating film is applied to the electrode surfaces, providing effective electrical isolation through the film's dielectric properties and thickness. This thin film structure prevents discharge while occupying minimal space, avoiding the need for large lateral spacing between electrodes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of SInSiN or polyimide films effectively increases the insulating distance between the electrodes, thereby restraining electric discharge and enhancing the semiconductor device's operational reliability by providing a longer creeping distance.
Implementation Method 1
At least any of a first end of the first anode electrode on a second anode electrode side and a second end of the second anode electrode on a first anode electrode side is covered with a semi-insulated silicon nitride (SInSiN) film
Data Source
AI summary
A semiconductor device includes a semiconductor substrate, a first anode electrode, and a second anode electrode. The first anode electrode is disposed on the semiconductor substrate. The second anode electrode is spaced from the first anode electrode on the semiconductor substrate around the first anode electrode. At least any of a first end of the first anode electrode on a second anode electrode side and a second end of the second anode electrode on a first anode electrode side is covered with a SInSiN film.