Lifetime Killer Region in SiC Substrate for Cosmic Ray Resistance
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Solution Overview
Problem
Conventional semiconductor devices are susceptible to degradation and destruction due to secondary cosmic rays, which pose a significant reliability concern, especially in applications where resistance to cosmic ray-induced damage is essential, such as in power semiconductor devices used in vehicles and outer space missions.
Innovation Solution
A semiconductor device with a wide bandgap semiconductor material, such as silicon carbide, incorporates a lifetime killer region with recombination centers introduced by helium or proton irradiation in the n-type drift region, spanning from the active region to the edge termination region, to trap and recombine charge carriers generated by secondary cosmic ray neutrons, thereby suppressing avalanche breakdown.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional semiconductor devices are used, then manufacturing and operation are straightforward, but they are susceptible to degradation and destruction due to secondary cosmic rays
Solution Approach 1:
The patent introduces a lifetime killer region in advance within the semiconductor device structure. This region contains recombination centers that are pre-positioned to capture and recombine charge carriers generated by cosmic ray interactions before they can cause avalanche breakdown. By preparing this protective mechanism in advance, the device gains resistance to cosmic ray-induced damage without requiring complex external protection systems.
Solution Approach 2:
The patent converts the harmful effect of cosmic ray-induced charge carriers into a beneficial outcome. By introducing recombination centers in the lifetime killer region, the device intentionally creates pathways for charge carriers to recombine harmlessly. This transforms the potential damage from cosmic rays into a controlled recombination process that actually protects the device from avalanche breakdown.
2Reliability
If the lifetime killer region is introduced to protect against cosmic rays, then resistance to cosmic ray-induced damage is improved, but device structure becomes more complex
Solution Approach 1:
The patent applies the lifetime killer region selectively in specific areas of the semiconductor device where cosmic ray-induced damage is most likely to occur. Rather than uniformly modifying the entire device structure, the recombination centers are introduced in targeted regions, providing localized protection against avalanche breakdown while minimizing overall structural complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances the device's resistance to cosmic ray-induced damage, reducing the occurrence of avalanche breakdown and improving the reliability of semiconductor devices by effectively recombining charge carriers before they cause damage.
Implementation Method 1
a lifetime killer region with recombination centers introduced by helium or proton irradiation in the n-type drift region
Implementation Method 2
recombination centers introduced by helium or proton irradiation
Implementation Method 3
effectively recombining charge carriers before they cause damage
Data Source
AI summary
A semiconductor device having, in a plan view thereof, an active region and a termination region that surrounds a periphery of the active region. The device includes a semiconductor substrate containing a wide bandgap semiconductor, a first-conductivity-type region provided in the semiconductor substrate, spanning from the active region to the termination region, a plurality of second-conductivity-type regions provided between the first-conductivity-type region and the first main surface of the semiconductor substrate in the active region, a first electrode provided on a first main surface of the semiconductor substrate and electrically connected to the second-conductivity-type regions, a second electrode provided on the second main surface of the semiconductor substrate and electrically connected to the first-conductivity-type region, and a lifetime killer region provided in the first-conductivity-type region and spanning from the active region to the termination region. In the active region, pn junctions between the first-conductivity-type region and the second-conductivity-type regions form a vertical semiconductor device element.