Concentric Semiconductor Memory Structure for High Capacity
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Solution Overview
Problem
Current memory devices face challenges in achieving high reliability and large memory capacity while maintaining a novel and efficient semiconductor design.
Innovation Solution
A semiconductor device is designed with a structure body extending in a first direction, featuring conductors and insulators arranged concentrically around a third conductor. This configuration includes transistors and capacitors in intersection portions, utilizing silicon nitride as a functional body to achieve normally-off and normally-on transistor operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional memory device structures are used, then manufacturing is simpler, but reliability and memory capacity are insufficient
Solution Approach 1:
The patent implements a nested concentric structure where multiple functional layers (insulators, semiconductors, conductors) are arranged concentrically around a central third conductor. This nesting approach increases memory capacity and reliability by creating multiple intersection portions that form transistors and capacitors within a compact volume, while the systematic concentric arrangement maintains manufacturing feasibility through standardized layer deposition processes.
Solution Approach 2:
The patent transitions from planar two-dimensional memory structures to a three-dimensional concentric configuration. By arranging functional bodies, insulators, and conductors in concentric circles around a central conductor, the design utilizes the vertical and radial dimensions to create multiple intersection portions, thereby increasing memory capacity without proportionally increasing footprint area.
2Quantity of substance
If memory capacity is increased, then more data storage is achieved, but device complexity increases
Solution Approach 1:
The concentric nesting of multiple functional layers around a central conductor enables the creation of multiple transistors and capacitors within a compact three-dimensional structure. This nested configuration increases memory capacity by packing more functional elements into a smaller volume while maintaining a systematic architecture that manages structural complexity.
Solution Approach 2:
The patent employs three-dimensional concentric arrangement to increase memory capacity by utilizing vertical stacking and radial positioning. This dimensional transition allows multiple intersection portions to be formed in a compact footprint, increasing the number of storage elements without linearly increasing device complexity.
3Quantity of substance
If functional bodies and insulators are arranged concentrically, then memory capacity increases, but manufacturing precision requirements increase
Solution Approach 1:
The patent segments the concentric structure into distinct functional layers (first insulator, first semiconductor, second insulator, second semiconductor, third insulator, functional body, fourth insulator) arranged around a central third conductor. Each layer can be deposited and patterned separately using standard semiconductor manufacturing processes, which reduces the precision burden compared to creating a single monolithic concentric structure.
Solution Approach 2:
By transitioning to three-dimensional concentric arrangement, the patent distributes manufacturing complexity across multiple vertical and radial steps rather than requiring single-step precise concentric positioning. The multi-layer deposition process allows for incremental formation of concentric structures, reducing the precision requirements for any single manufacturing step.
Data Source
AI summary
A novel semiconductor device is provided. A structure body extending in a first direction, a first conductor extending in a second direction, and a second conductor extending in the second direction are provided. In a first intersection portion where the structure body and the first conductor intersect with each other, a first insulator, a first semiconductor, a second insulator, a second semiconductor, a third insulator, a fourth insulator, and a fifth insulator are provided concentrically around a third conductor. In a second intersection portion where the structure body and the second conductor intersect with each other, the first insulator, the first semiconductor, the second insulator, a fourth conductor, the second semiconductor, and the third insulator are provided concentrically around the third conductor.