Conductive Line Post-Treatment Using CxHyFz Gas
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Solution Overview
Problem
The existing methods for manufacturing conductive lines, such as those on LTPS and AMOLED substrates, face challenges in preventing aluminum corrosion and high manufacturing costs due to the need for high-energy processes to decompose CF4 and provide sufficient fluorine for after-treatment.
Innovation Solution
A method involving the use of CxHyFz gases and water vapor in a post-treatment process within an etching chamber to decompose and dissociate, reacting with the patterned metal layer to prevent corrosion, using lower source power and reducing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If CF4 is used for after-treatment to prevent aluminum corrosion, then aluminum corrosion is prevented, but extreme high source power (about 15000 watts) is required to decompose CF4, consuming a lot of electric power and energy
Solution Approach 1:
The patent changes the chemical parameters by replacing CF4 with CxHyFz gas (where x+y+z≤6). This substitution allows the after-treatment process to achieve effective aluminum corrosion prevention while requiring significantly lower source power, thus resolving the contradiction between reliability and energy consumption
Solution Approach 2:
The patent employs CxHyFz gas as a consumable material in the after-treatment process. This gas can be easily introduced and consumed during the process, providing the necessary fluorine atoms for aluminum protection without requiring the extreme energy input needed for CF4 decomposition
2Reliability
If high flow rate of CF4 is introduced into etching chamber to provide enough F* for AT process, then aluminum corrosion is prevented, but manufacturing cost for forming conductive lines increases
Solution Approach 1:
The patent changes the chemical composition parameter by substituting CF4 with CxHyFz gas. This parameter change enables effective aluminum corrosion prevention at lower gas flow rates, thereby reducing manufacturing costs while maintaining the protective function
Solution Approach 2:
The patent uses CxHyFz gas as a cost-effective consumable that can be introduced at lower flow rates compared to CF4. This disposable gas provides the necessary fluorine for aluminum protection without the high cost associated with CF4 consumption
3Use of energy by moving object
If CxHyFz gas is used in post-treatment process, then source power consumption is reduced, but sufficient F* must be provided to ensure AT process occurrence
Solution Approach 1:
The patent optimizes the chemical parameters of CxHyFz gas (where x+y+z≤6) to achieve an ideal balance between ease of decomposition and fluorine atom supply. This parameter optimization ensures sufficient F* generation at lower source power levels, resolving the contradiction between energy consumption and substance quantity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively prevents aluminum corrosion with lower energy consumption and reduced manufacturing costs, resulting in smooth sidewalls and efficient conductive line production.
Implementation Method 1
decomposing and dissociating the CxHyFz gas and water vapor to have the decomposed and dissociated CxHyFz gas and water vapor react with the patterned metal layer
Implementation Method 2
the decomposed and dissociated CxHyFz gas and water vapor react with the patterned metal layer
Data Source
AI summary
The present disclosure provides a method for manufacturing a conductive line. The method includes steps of providing a substrate; forming a metal layer on the substrate; patterning the metal layer by etching a portion of the metal layer; and performing a post-treatment process on the patterned metal layer in a chamber by injecting a CxHyFz gas and water vapor into the chamber, such that the patterned metal layer avoids from being corroded after the post-treatment process is performed.