Conductive Pad Protrusion Layout for Low-Resistance Hybrid Bonding
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Solution Overview
Problem
The complexity of manufacturing semiconductor devices increases with the continual reduction of minimum feature size, leading to challenges in forming and integrating smaller package structures, which can affect the reliability and electrical resistance of semiconductor structures.
Innovation Solution
A semiconductor structure is designed with a conductive pad featuring a protrusion, where the protrusion is formed through deposition, allowing for hybrid bonding at lower temperatures and reducing electrical resistance by using a through silicon via (TSV), thus improving the overall structure and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the minimum feature size is reduced to increase integration density, then more components can be integrated into a given area, but the complexity of manufacturing processes increases
Solution Approach 1:
The bonding layer is segmented by forming via openings that expose portions of the conductive pad, creating distinct regions for bonding and electrical connection. This segmentation allows the bonding process to occur at lower temperatures while maintaining electrical integrity through the exposed pad portions.
Solution Approach 2:
The conductive pad is designed with a protrusion that extends in the vertical dimension beyond the bonding layer surface. This dimensional change creates an exposed portion that facilitates electrical connection without requiring high-temperature processing, thus reducing manufacturing complexity while maintaining integration density.
2Area of stationary object
If smaller package structures are used to reduce footprint, then integration of components of different sizes is facilitated, but the reliability and electrical resistance of the semiconductor structure may be affected
Solution Approach 1:
The conductive pad protrusion is formed in advance during the bonding layer formation process, before the actual bonding occurs. This preliminary action ensures that the electrical connection path is already established and optimized, improving reliability while maintaining the small package footprint.
Solution Approach 2:
The bonding layer has different properties in different regions: areas covering the conductive pad provide electrical connection with lower resistance, while other areas are optimized for bonding. This local differentiation of properties enhances both reliability and electrical performance within the constrained footprint.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The formation of a protrusion between the conductive pad and TSV reduces electrical resistance and enhances the reliability of the semiconductor structure, facilitating lower temperature hybrid bonding and maintaining structural integrity.
Implementation Method 1
the protrusion is formed through deposition
Implementation Method 2
reducing electrical resistance by using a through silicon via (TSV)
Data Source
AI summary
The present application provides a semiconductor structure having a conductive pad with a protrusion, and a manufacturing method of the semiconductor structure. The semiconductor structure includes a first die including a first substrate, a first dielectric layer over the first substrate, a first conductive pad at least partially exposed through the first dielectric layer, a first bonding layer over the first dielectric layer, and a first via extending through the first bonding layer and coupled to the first conductive pad; and a second die including a second bonding layer bonded to the first bonding layer, a second substrate over the second bonding layer, and a second via extending through the second substrate and the second bonding layer, wherein a first contact surface area between the first bonding layer and the second via is substantially greater than a second contact surface area between the first via and the second via.