Conductive Pattern Capping Structure for Precise Display Etching
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Solution Overview
Problem
Current display device fabrication methods face challenges in achieving high reliability for conductive patterns, particularly in forming conductive layers with precise etching rates and materials that prevent smudging and ensure reliable electrical connections.
Innovation Solution
A method involving the sequential formation of conductive metal and capping layers on a substrate, using etching processes with specific over-etch rates and etchant speeds to create precise patterns, including the use of materials like copper, indium tin oxide, and titanium, ensuring alignment and protection of the conductive layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a single etching process is used for conductive layers, then the manufacturing process is simple, but the etching precision and pattern accuracy deteriorate
Solution Approach 1:
The etching process is divided into multiple sequential steps: first etching the conductive metal material layer to form a conductive metal pattern, then etching the conductive capping material layer to form a conductive capping pattern. This segmentation allows each layer to be etched with optimized parameters, achieving high precision patterns while maintaining manufacturing feasibility
Solution Approach 2:
The conductive metal material layer is etched first to form the conductive metal pattern before etching the conductive capping material layer. This preliminary action establishes the underlying pattern structure, allowing the subsequent capping layer etching to be precisely aligned and controlled, thereby improving overall pattern accuracy
2Reliability
If the conductive capping material layer is not over-etched, then material waste is reduced, but residual capping material remains causing smudging and connection reliability deterioration
Solution Approach 1:
The etching parameters (etchant type, concentration, temperature, etching time) are optimized to achieve selective over-etching of the conductive capping material layer. By controlling the etching rate and duration, the process removes residual capping material completely without affecting the conductive metal pattern, ensuring reliable electrical connections while minimizing material loss
Solution Approach 2:
Chemical etching is used instead of mechanical removal methods to eliminate residual capping material. The etchant selectively dissolves the capping material through chemical reactions, providing precise control over material removal and ensuring complete elimination of residues that could cause smudging or connection failures
3Reliability
If copper is used as the main conductive metal material, then electrical conductivity is improved, but etching control and pattern precision deteriorate due to high etching speed
Solution Approach 1:
A conductive capping material layer (such as ITO, IZO, or ITZO) is introduced as an intermediary layer over the copper conductive metal material layer. This capping layer serves as a protective and etching-control layer that slows down the overall etching process, allowing precise pattern formation while the underlying copper layer maintains its high electrical conductivity
Solution Approach 2:
The conductive layer is structured as a composite of copper (for high conductivity) and a conductive capping material (for etching control and pattern precision). This composite structure combines the advantages of both materials: copper provides excellent electrical conductivity while the capping material enables controlled etching and precise pattern formation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the reliability of conductive patterns by preventing smudging and ensuring accurate etching, leading to improved electrical connections and overall device performance.
Implementation Method 1
forming a first conductive capping pattern by etching the conductive capping material layer with a first etchant, forming a conductive metal layer and a second conductive capping pattern by etching the conductive metal material layer and the first conductive capping pattern with a second etchant
Data Source
AI summary
A method of fabricating a conductive pattern includes forming a conductive metal material layer and a conductive capping material layer on a substrate, forming a photoresist pattern as an etching mask on the conductive capping material layer, forming a first conductive capping pattern by etching the conductive capping material layer with a first etchant, forming a conductive metal layer and a second conductive capping pattern by etching the conductive metal material layer and the first conductive capping pattern with a second etchant, and forming a conductive capping layer by etching the second conductive capping pattern with a third etchant. The second conductive capping pattern includes a first region overlapping the conductive metal layer and a second region not overlapping the conductive metal layer, and the forming of the conductive capping layer includes etching the second region of the second conductive capping pattern to form the conductive capping layer.