Conductive Plug Structure for Void-Free Cavity Filling
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Solution Overview
Problem
As semiconductor devices continue to integrate more components into a given area through reduced minimum feature sizes, the formation of conductive structures with reduced resistance and voids becomes challenging, leading to increased resistance and performance degradation.
Innovation Solution
The formation of conductive structures involves converting a treatable layer over an underlying structure into a second material with a different etch rate, followed by selective removal of non-targeted portions to reduce the aspect ratio of cavities, allowing for void-free filling with conductive materials.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If minimum feature sizes are reduced to increase integration density, then more components can be integrated into a given area, but formation of conductive structures becomes challenging leading to increased resistance and voids
Solution Approach 1:
The conductive structure formation process is segmented into multiple stages: initial cavity formation, intermediate material deposition, and final conductive material filling. This segmentation allows each stage to be optimized independently, ensuring complete filling without voids even at reduced feature sizes
Solution Approach 2:
The method performs preliminary actions by forming a sacrificial material layer and cavity structure before depositing the final conductive material. This preliminary structuring ensures that the cavity is properly prepared and positioned, enabling complete subsequent filling without void formation
2Ease of manufacture
If conventional filling methods are used for conductive structures, then the process is simple, but voids form in the conductive structures leading to increased resistance
Solution Approach 1:
A sacrificial intermediate material layer is introduced as a mediator between the cavity structure and the final conductive material. This intermediate layer facilitates complete filling by providing a controlled interface that prevents void formation, while the entire process remains compatible with existing manufacturing equipment and procedures
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method reduces resistance and prevents performance degradation by ensuring complete filling of cavities without voids, enhancing the electrical connectivity and reliability of semiconductor devices.
Implementation Method 1
converting a treatable layer over an underlying structure into a second material with a different etch rate
Implementation Method 2
selective removal of non-targeted portions to reduce the aspect ratio of cavities
Data Source
AI summary
Provided are structures and devices with conductive structures. A structure includes a cavity delineated by sidewalls of a dielectric material; a conductive structure bordering a bottom of the cavity; a layer or layers of material in the cavity and located directly on the conductive structure and directly on the sidewalls of the dielectric material, wherein the layer or layers of material comprise a barrier metal; and a conductive plug in the cavity and located directly on the layer or layers of material and directly on the sidewalls of the dielectric material.