Configurable Memory Cell for RFID Tags
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Solution Overview
Problem
Conventional nonvolatile memory technologies are limited in their ability to function as either single-ended dual bits memory for high density or single bit differential memory, lacking the flexibility to offer both configurations simultaneously, which constrains their usage in applications requiring varying data retention and reliability.
Innovation Solution
A configurable memory device with an array of units that can operate in either single-ended or differential configurations, determined by an external control signal, utilizing a memory cell with two floating-gate p-channel field effect transistors to store data as either two independent bits or a single differential bit, allowing for flexible operation depending on the configuration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If conventional nonvolatile memory structures are used, then either single-ended dual bits memory or single bit differential memory can be implemented, but not both configurations simultaneously
Solution Approach 1:
The memory device is designed to perform multiple functions through a single unified structure. The same physical memory cell can operate in both single-ended dual bits mode and single bit differential mode, eliminating the need for separate memory structures for different configurations. This is achieved through control circuitry that switches between operational modes while maintaining the same physical architecture.
Solution Approach 2:
The memory device transitions from static, fixed-configuration structures to dynamic, reconfigurable systems. External control signals enable the memory cell to switch between different operational configurations (single-ended vs. differential, dual bits vs. single bit) based on application requirements. This dynamic reconfiguration capability allows the same hardware to adapt to varying performance needs without physical restructure.
2Quantity of substance
If single-ended dual bits memory is used, then high density is achieved, but data retention and reliability are compromised
Solution Approach 1:
The invention changes operational parameters by switching between different reading modes. In single-ended mode, the memory cell can store two bits for high density, while in differential mode it stores one bit with improved retention characteristics. The control circuitry adjusts the reading parameters based on the desired configuration, allowing the same physical structure to exhibit different storage densities and retention properties as needed.
3Reliability
If single bit differential memory is used, then data retention and reliability are improved, but storage density is reduced
Solution Approach 1:
The memory device dynamically switches between operational modes to optimize for different requirements. When high reliability is needed, the system configures the memory cell in differential mode for single bit storage. When high density is required, it switches to single-ended dual bits mode. This dynamic adaptability allows the same memory array to provide different effective densities and retention characteristics based on application needs.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The configurable memory device achieves high density and improved data retention and reliability by enabling operation as either single-ended dual bits or single bit differential memory, addressing the limitations of conventional technologies and enhancing performance in applications like RFID tags and portable devices.
Implementation Method 1
the present invention relates to single-ended and differential-type nonvolatile memory using floating-gate p-channel field effect transistors (pFETs) to store information as electric charge
Data Source
AI summary
A configurable memory device includes an array of configurable memory units arranged into rows and columns. The configurable memory unit includes a memory cell comprising a first storage element configured to store a first value and a second storage element configured to store a second value. The memory unit can be either a single-ended or a differential configuration. In the single-ended configuration, the stored value of each storage element is interpreted as one bit. In the differential configuration, the stored first and second values of the storage elements are interpreted as a differential single bit. An external control signal determines in which configuration the unit is in.