Semiconductor devices

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Solution Overview

Problem

The increasing demand for high-performance, high-speed, and multifunctional semiconductor devices necessitates the implementation of fine patterns with narrow widths and tight separation distances, which poses challenges in manufacturing and can lead to damage during the formation of contact structures, affecting the reliability of the devices.

Innovation Solution

The semiconductor device incorporates a vertical channel transistor design with specific contact patterns and structures, including bit lines, word lines, and contact plugs, where the contact patterns are formed using the same material and have coplanar upper surfaces, and contact barrier layers cover side and lower surfaces to enhance reliability by minimizing damage during the formation process.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If fine patterns with narrow widths and tight separation distances are implemented to increase integration, then device functionality and performance are improved, but the likelihood of damage during contact structure formation increases

Engineering Contradiction:

Improvedevice functionalityVSAvoidcontact pattern integrity

Core Design Contradiction:

Adaptability or versatilityVSReliability

Solution Approach 1:

The contact barrier layer is formed on the side and lower surfaces of contact plugs before the contact patterns are formed. This preliminary protective action prevents damage to the contact patterns during subsequent manufacturing processes, thereby improving reliability while maintaining fine pattern capabilities

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The contact barrier layer acts as an intermediary protective element between the contact plugs and the contact patterns. This intermediate structure prevents direct damage to the contact patterns during formation processes, resolving the contradiction between fine pattern implementation and damage prevention

Inventive Principle:

Principle #24Intermediary (Mediator)

2Productivity

If contact patterns are formed with narrow widths and tight separation, then device integration is improved, but manufacturing precision and damage resistance deteriorate

Engineering Contradiction:

Improvedevice integrationVSAvoidcontact pattern formation

Core Design Contradiction:

ProductivityVSManufacturing precision

Solution Approach 1:

The contact barrier layer is deposited on the side and lower surfaces of contact plugs before contact pattern formation. This preliminary protective measure enables manufacturers to work with narrower contact patterns without risking damage, thus improving integration while maintaining manufacturing precision

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The contact barrier layer provides beforehand cushioning protection to the contact plugs during the contact pattern formation process. This protective cushioning allows for tighter spacing and narrower widths without compromising manufacturing precision or causing damage

Inventive Principle:

Principle #11Beforehand cushioning (Prior cushioning)

3Reliability

If contact barrier layers are added to protect contact patterns, then reliability is improved, but device complexity increases

Engineering Contradiction:

Improvecontact pattern protectionVSAvoidcontact structure complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The contact barrier layer is applied locally only to the side and lower surfaces of contact plugs where damage is most likely to occur during contact pattern formation. This localized approach improves reliability without adding unnecessary complexity to the entire contact structure

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The contact barrier layer uses the same material as the contact patterns, creating a compatible protective copy that integrates seamlessly with the existing contact structure. This material consistency improves reliability while minimizing the increase in device complexity

Inventive Principle:

Principle #26Copying

Data Source

PatentUS20260076168A1Semiconductor devices

Publication Date: 2026.03.12 SAMSUNG ELECTRONICS CO LTD

AI summary

A semiconductor device includes: a bit line structure; cell channel structures; word lines; first contact patterns; second contact patterns; an information storage structure; a peripheral transistor; a peripheral conductive interconnection electrically connected to the peripheral transistor; and a contact structure including a first contact plug portion electrically connected to the bit line structure, a second contact plug portion horizontally spaced apart from the first contact plug portion and electrically connected to the peripheral conductive interconnection, and a connection portion extending from the first contact plug portion and the second contact plug portion. The contact structure may include a contact conductive pattern in the connection portion and extending from a portion in the connection portion into the first contact plug portion and the second contact plug portion.