Contact Liner Structure for Low-Resistance Semiconductor Contacts
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Solution Overview
Problem
As semiconductor devices miniaturize, achieving effective separation and low resistance between conductive layers becomes increasingly challenging, particularly in contact resistance, which affects the performance and efficiency of semiconductor devices.
Innovation Solution
The implementation of an additional insulating liner layer in contact openings, which is partially removed to allow for increased conductive material filling, thereby improving electrical isolation and reducing contact resistance, is employed. This involves forming a conductive material layer in the contact openings with a remaining insulating liner layer, allowing for better isolation between the contact and the gate or other conductive elements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conductive material is filled in contact openings to reduce contact resistance, then contact resistance decreases, but electrical isolation between conductive layers deteriorates
Solution Approach 1:
The contact opening is segmented into multiple sections by introducing an insulating liner layer that partially lines the contact opening. This segmentation allows the conductive material to be divided into discrete contact regions separated by insulating portions, enabling simultaneous achievement of low contact resistance in the conductive paths and electrical isolation between adjacent contacts or conductive elements.
Solution Approach 2:
The insulating liner layer is applied selectively to specific regions within the contact opening rather than uniformly throughout. The liner is present in some portions of the contact opening while absent in others, creating local variations in electrical properties. This local quality approach allows conductive material to make contact where needed (low resistance) while providing isolation where the liner is present.
2Object-affected harmful factors
If insulating liner layer is added in contact openings to improve electrical isolation, then electrical isolation improves, but contact resistance increases
Solution Approach 1:
The insulating liner layer is applied partially rather than completely within the contact opening. By controlling the extent of liner deposition so that it lines only some portions of the contact opening while leaving other portions open for conductive material contact, the solution achieves a balance between isolation and conductivity. The partial action of the liner provides sufficient isolation without excessively impeding conductive pathways.
Solution Approach 2:
The insulating liner layer acts as an intermediary element within the contact opening structure. It mediates between the conflicting requirements of electrical isolation and conductive contact by providing isolation in regions where it is present while allowing conductive material to bypass or contact through regions where the liner is absent or thinner, thus reconciling the opposing electrical property requirements.
Data Source
AI summary
A semiconductor device includes a substrate provided with an electronic device, an interlayer dielectric (ILD) layer formed over the electronic device, a wiring pattern formed on the ILD layer and a contact formed in the ILD layer and physically and electrically connecting the wiring pattern to a conductive region of the electronic device. An insulating liner layer is provided on sidewalls of the contact between the contact and the ILD layer. A height of the insulating liner layer measured from a top of the conductive region of the electronic device is less than 90% of a height of the contact measured between the top of the conductive region and a level of an interface between the ILD layer and the wiring pattern.