3D Memory Contact Plug Formation Using Metal Silicide Height Compensation
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Solution Overview
Problem
The manufacturing process of 3D memory devices is complex and costly due to the need for forming contact plugs with different heights for various components, which requires multiple steps and increases processing time and cost.
Innovation Solution
A two-step process is used to form contact structures with different heights, where a first conductive pillar is surrounded by a dielectric material layer and topped with a metal silicide layer, upon which a second conductive pillar is formed, allowing for the creation of contact plugs with uniform heights in a single manufacturing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If contact plugs for different components are formed separately in traditional processes, then each contact plug can be precisely formed, but the manufacturing process becomes complicated and processing time increases
Solution Approach 1:
The patent merges the formation of multiple different contact plugs (first contact plug connecting to first conductive strip, second contact plug connecting to second conductive strip) into a single unified manufacturing process. The method forms both contact plugs simultaneously by creating holes through the insulating layer to expose different conductive strips, then filling both holes with conductive material in one step, thereby reducing process complexity while maintaining precision
Solution Approach 2:
The manufacturing process is designed to be universal, capable of forming multiple types of contact plugs (different heights, different connections) using the same general procedure. The method accommodates various conductive strips (first conductive strip, second conductive strip) and forms corresponding contact plugs (first contact plug, second contact plug) through a standardized sequence of steps that can be applied repeatedly across different device regions
2Manufacturing precision
If multiple separate processes are used to form contact plugs of different heights, then each contact plug can be optimized, but processing time and cost increase
Solution Approach 1:
The patent segments the contact plug formation into distinct phases: first forming holes to different depths to expose different conductive strips, then filling these holes with conductive material. This segmentation allows each contact plug to have its optimized height and connection characteristics while being formed in a single coordinated process, avoiding the need for multiple separate processing cycles
Solution Approach 2:
The method performs preliminary actions by first forming the insulating layer with embedded conductive strips at predetermined positions and depths, then creating holes that expose specific conductive strips. This preliminary preparation enables subsequent contact plug formation to proceed efficiently in a single step, as the structural framework is already in place to guide the process
Data Source
AI summary
A semiconductor structure and a manufacturing method of the same are provided. The semiconductor structure includes a plurality of stacked structures and a plurality of contact structures. Each of the stacked structures includes a plurality of conductive strips and a plurality of insulating strips, and the conductive strips and the insulating strips are interlaced. Each of the contact structures is electrically connected to each of the stacked structures. The contact structure includes a first conductive pillar, a dielectric material layer, a metal silicide layer, and a second conductive pillar. The dielectric material layer surrounds the lateral surface of the first conductive pillar. The metal silicide layer is formed on an upper surface of the first conductive pillar. The second conductive pillar is formed on the metal silicide layer. The upper surfaces of the first conductive pillars are coplanar.