Semiconductor/Solid-State Device Details TRIZ Cases

Segmented copper layers with distinct plating methods reduce undercut regions and enhance corrosion resistance in semiconductor devices.

A chip-stacked semiconductor package uses a flexible circuit substrate to electrically connect stacked chips via a folded region.

Sacrificial plugs shield upper wiring structures during skip via etching, preventing surface damage that increases resistivity and degrades device performance.

A cohered nanoparticle matrix with embedded metallic particles conducts heat from the semiconductor backside.

A pad structure on a first metal layer connects to peripheral circuits in a stacked nonvolatile memory device, reducing resistance and capacitance.

A hydrogen blocking layer prevents outgassing from logic devices during annealing, suppressing dangling bonds and protecting metal interconnect reliability.

A semiconductor package stacks chips orthogonally and routes signals through conductive pillars passing through a molding element.

Varying connection heights on package substrates compensate for thermal warpage, preventing solder ball short-circuits during reflow.

Sidewall image transfer pillars define via lateral dimensions, resolving self-aligned processing contradictions that cause improper aspect ratios.

Bent wire bonds embedded in a reinforcing dielectric layer resolve manufacturing precision limits by enabling high aspect ratio microcontacts with small pitch.

Air gaps replace dielectric material between metal wirings to lower parasitic capacitance and signal delays.

A thermally conductive molded resin article uses composite fillers to reduce internal thermal resistance.

A multi-layer thermal interface material uses a rupture barrier to mix liquid metal and solid solute for enhanced conductivity.

Conductive patterns embedded in a patterning layer electrically connect semiconductor dies to substrates without external wires.

A thermal expansion-matching layer balances internal stress to prevent warpage caused by coefficient mismatch in flip chip packages.

A VNAND channel connection layer patterned before common source line formation ensures proper positioning and spacing.

Reversible fuse structures utilize electromigration to create programmable elements within semiconductor devices.

Higher liquidus support features prevent connector bump collapse to maintain uniform stand-off height.

Dual-pitch substrates accommodate varying thermal expansion coefficients, preventing cracks while allowing smaller bump connections for higher design freedom.

A semiconductor clip features a bent support portion extending along the sealing body side to lengthen the moisture path.

Oxygen-free electroless deposition using a ruthenium amine complex eliminates chemical mechanical polishing waste while maintaining manufacturing precision.

Selective electrolytic plating creates thick metal bumps on nitride semiconductor electrodes, resolving leakage risks and reducing manufacturing complexity.

A disordered carbon coating transfers heat while blocking leakage currents in electronic assemblies.

A graphene thermally-conductive layer transfers heat from a semiconductor die to the substrate through direct contact.

Localized necking in semiconductor leads accommodates differential thermal expansion, preventing solder joint cracking under cyclic temperature changes.

Laser beams pass through the carrier body to reflow solder material, increasing manufacturing throughput while ensuring reliable electrical connectivity.

A conducting layer extends from a semiconductor substrate upper surface to its sidewall, electrically connecting pads through an integrated insulating barrier.

A power conversion device uses a base plate convex hull to form coolant channels for direct heat transfer from the converter module.

A rare earth metal-based bonding material joins substrates with minimal surface preparation.

Offset stacked semiconductor chip bodies with columnar electrodes resolve volume constraints while maintaining electrical connectivity.

Protruding vias enable lands to wrap around vertical sides, increasing contact area to maintain connection reliability despite reduced planar dimensions.

A semiconductor element uses a second insulating layer to selectively expose one of two pads on a wiring layer for flexible electrical connection.

A QFN lead frame structure plates metal layers before stamping to ensure firm bonding on terminals and the main base.

An insulating layer mediates contact between alignment patterns, preventing detachment that shields pixel openings and increases power consumption.

Matching symbol pattern widths to device design rules prevents CMP defects and improves identification precision.

Lithography creates delicate contact tracks across rigid and flexible substrates, eliminating large contact areas to preserve chip area.

A semiconductor package uses segmented die pads to electrically and thermally isolate multiple dice within a single lead frame structure.

A heterogeneous copper-tin nanowire array delivers ultra-compliant thermal conduction for electronic systems.

A passive chip device integrates a conductive coil on a single-piece body with terminal contacts extending from end faces to the surface.

Low current density electroplating deposits metal onto polymer sphere templates to create textured surfaces with defined protrusions and dimples.

Merged power supply architecture eliminates separate efuse voltage generation, reducing pin count and production cost.

Backside alignment pattern on insulating layers allows optical sensors to guide cutting devices, reducing processing steps and improving integration density.

A gradient hardness nickel layer restrains solder diffusion while reducing mechanical stress in semiconductor interconnects.

A heat dissipating printed circuit board structure integrates a heat pipe through a substrate hole to conduct thermal energy away from electronic components.

Segmented silicon photodetectors extend optical path length via resonance, achieving high quantum efficiency without sacrificing bandwidth.

Placing metal-insulator-metal capacitors in thick contact pad insulating layers overcomes layout constraints caused by thin interlayer dielectrics.

Thicker front-side metallization stabilizes the semiconductor body during thinning, reducing on-resistance while preventing wafer cracking.

Metal silicide layers compensate for first conductive pillar height variations to create uniform contact structures in 3D memory devices.

A conductive film with higher heat of formation prevents impurity diffusion in semiconductor contacts.

A thermal via fills an opening through dielectric layers to dissipate heat from a semiconductor die.