Graphene Thermal Layer for Semiconductor Power Device Heat Dissipation
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Solution Overview
Problem
Current semiconductor device packaging faces challenges in achieving effective thermal dissipation and cost-efficient EMI shielding, particularly for power devices, where large heat sinks and thick metal layers lead to reliability and cost issues.
Innovation Solution
Incorporating a graphene-based thermally-conductive layer, printed and compressed onto the semiconductor device package, which extends over the top surface and provides enhanced thermal dissipation and EMI shielding through a combination of thermal interface material and conductive ink, with thermally-conductive formations connecting to the substrate for efficient heat transfer and grounding.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If large heat sinks and thick metal layers are used for thermal dissipation, then thermal management is improved, but device size and cost increase
Solution Approach 1:
The patent applies thin film graphene layers (few-layer graphene or single-layer graphene) as thermal dissipation structures instead of bulky heat sinks. The graphene layer is deposited as a thin film on the semiconductor device surface, providing efficient thermal conduction while maintaining a compact form factor and reducing overall device volume.
Solution Approach 2:
The patent uses composite material structures combining graphene with other materials to achieve both thermal dissipation and EMI shielding functions. The semiconductor device incorporates graphene layers combined with metal interconnects and substrate structures, creating a composite system that provides thermal management without requiring separate large heat sink components.
2Temperature
If large heat sinks and thick metal layers are used for thermal dissipation, then thermal management is improved, but manufacturing cost increases
Solution Approach 1:
The patent employs thin film graphene deposition techniques that can be integrated into existing semiconductor manufacturing processes. The graphene layer is applied as a thin film structure that requires minimal additional processing steps compared to attaching separate heat sink components, thereby reducing manufacturing complexity and cost.
Solution Approach 2:
The patent merges thermal dissipation and EMI shielding functions into a single integrated graphene-based structure. By combining these two functions that were previously required separate components (heat sinks and metal shielding layers), the patent reduces the total number of components, simplifies assembly processes, and lowers overall manufacturing cost.
3Object-affected harmful factors
If thick metal layers are used for EMI shielding, then electromagnetic interference protection is improved, but device size and cost increase
Solution Approach 1:
The patent uses thin film graphene layers for EMI shielding instead of thick metal layers. The graphene film provides effective electromagnetic interference protection while maintaining a thickness of only a few nanometers to micrometers, dramatically reducing the volume required for shielding compared to conventional thick metal layer approaches.
Solution Approach 2:
The patent employs composite material structures where graphene works synergistically with the semiconductor substrate and interconnect structures to provide EMI shielding. This composite approach achieves effective shielding with thinner overall structures compared to using thick metal layers alone.
4Object-affected harmful factors
If thick metal layers are used for EMI shielding, then electromagnetic interference protection is improved, but manufacturing cost increases
Solution Approach 1:
The patent applies thin film graphene deposition processes that are compatible with standard semiconductor manufacturing techniques. This approach eliminates the need for separate thick metal layer deposition and assembly steps, reducing manufacturing complexity and cost while achieving effective EMI shielding.
Solution Approach 2:
The patent combines EMI shielding functionality with the thermal dissipation structure and semiconductor device layers into an integrated system. By merging EMI shielding with existing device structures rather than adding separate thick metal shielding layers, the patent reduces manufacturing steps and overall cost.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The graphene-based solution enhances thermal dissipation and EMI shielding, reducing the need for bulky heat sinks and metal layers, thereby improving reliability and reducing costs while maintaining effective thermal management and electromagnetic interference protection.
Implementation Method 1
a thermally-conductive layer (28) over said portion of the package facing said surface of the semiconductor die
Implementation Method 2
the thermally-conductive layer including graphene extends in contact with and/or in the vicinity of said surface of the semiconductor die at said recessed portion
Data Source
AI summary
A semiconductor device, such as a semiconductor power device, includes: a semiconductor die having a semiconductor die front surface, a package formed onto the semiconductor die, the package having a portion facing the front surface of the semiconductor die, and a thermally-conductive layer including graphene over the front portion of the package facing the front surface of the semiconductor die.