Backside Alignment Pattern for InFO Package Singulation
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Solution Overview
Problem
The semiconductor industry faces challenges in efficiently singulating integrated fan-out (InFO) packages due to the complexity of bonding processes and the need for precise alignment during the packaging of stacked semiconductor devices, which affects the miniaturization, speed, and bandwidth of semiconductor devices.
Innovation Solution
The implementation of a backside alignment pattern on InFO packages, which includes forming an alignment pattern on the first insulating layer, using conductive or non-conductive materials, and embedding it within the encapsulant or separate layers, allows for precise alignment and cutting of packages using a cutting device aligned by an optical sensor, enabling efficient singulation without the need to turn the packages over.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If packages are turned over for singulation, then alignment can be performed on the front side, but processing steps increase and efficiency decreases
Solution Approach 1:
The patent applies inversion by placing the alignment pattern on the backside of the package instead of the front side, enabling singulation to be performed without turning the package over. This reverses the conventional approach and directly resolves the contradiction by maintaining processing simplicity while improving efficiency.
Solution Approach 2:
The alignment pattern is formed on the backside during the encapsulation process before singulation occurs. This preliminary action ensures that alignment references are already in place when singulation begins, eliminating the need for additional alignment steps and reducing overall processing complexity.
2Manufacturing precision
If alignment pattern is embedded within encapsulant, then precise alignment is achieved, but manufacturing complexity increases
Solution Approach 1:
The patent merges the alignment pattern formation with the encapsulation process by depositing the pattern on the backside before encapsulant is applied. This combining of operations achieves precise alignment functionality without requiring separate manufacturing steps, thereby reducing overall manufacturing complexity.
Solution Approach 2:
The encapsulant serves as an intermediary medium that protects the alignment pattern while allowing optical sensors to detect it through the encapsulant material. This mediator approach enables precise alignment to be achieved without exposing the pattern to manufacturing damage, balancing precision with ease of manufacture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables precise and efficient singulation of InFO packages from the backside, reducing processing steps and improving the integration density and performance of semiconductor devices by allowing for more accurate and efficient packaging techniques.
Implementation Method 1
a cutting device is aligned to a backside of the first insulating layer using the alignment pattern
Data Source
AI summary
A method includes forming an alignment pattern over an insulating layer formed over a carrier. A die is mounted over the carrier and encapsulated. Connectors are formed and the structure is attached to a debond tape. The carrier is removed. A cutting device is aligned to a backside of the insulating layer using the alignment pattern. The first insulating layer and encapsulant are cut from the backside of the insulating layer. Another method includes scanning a backside of a packages structure for an alignment pattern in a first package area of the packages structure. A cutting device is aligned to a cut-line in a non-package area of the packages structure based on the alignment pattern and packages are singulated. An InFO package includes an insulating layer on the backside, the insulating layer having a laser marking thereon. The InFO package also includes an alignment pattern proximate to the insulating layer.