Thermal Via in Semiconductor Package for Heat Dissipation

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Solution Overview

Problem

Semiconductor device packaging faces challenges in effective heat dissipation due to the limitations of molding compounds and the metal structure of interconnect layers, which can lead to poor performance and failure of semiconductor devices, especially in packages with multiple electrically conductive layers separated by insulating layers.

Innovation Solution

The incorporation of thermal vias formed in the interconnect layers of semiconductor packages, which extend through multiple dielectric layers to provide a direct path for heat dissipation from the semiconductor die to the exterior surface, using thermally conductive materials that surpass the thermal capacity of traditional interconnects and dielectric layers.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If traditional molding compound and interconnect layers are used for semiconductor packaging, then electrical connections and die protection are achieved, but heat dissipation capability is insufficient leading to poor device performance and failure

Engineering Contradiction:
Improveheat dissipation capabilityVSAvoiddevice performance and failure rate
Core Design Contradiction:
TemperatureVSReliability

Solution Approach 1:

The patent segments the heat dissipation function from the electrical interconnect structure by introducing separate thermal via holes that penetrate through the molding compound and interconnect layers. This segmentation allows dedicated thermal pathways independent of the electrical routing, enabling effective heat removal without compromising electrical connection integrity.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent introduces thermal via holes filled with thermally conductive material as an intermediary structure between the semiconductor die and the external environment. This intermediary provides a low-thermal-resistance pathway that mediates heat transfer from the heat-generating die through the insulating molding compound and interconnect layers to external heat sinks.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Device complexity

If multiple electrically conductive layers separated by insulating layers are used in RCP packages, then high density interconnect routing is achieved, but heat dissipation is limited by long interconnect routing and metal structure

Engineering Contradiction:
Improveinterconnect routing densityVSAvoidheat dissipation efficiency
Core Design Contradiction:
Device complexityVSTemperature

Solution Approach 1:

The patent adds a vertical dimension to heat dissipation by creating through-molding-compound via holes that extend perpendicular to the die surface. This dimensional change allows heat to escape directly upward through the package structure, bypassing the lateral heat flow path through the interconnect layers and reducing thermal resistance without affecting the horizontal interconnect routing density.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent extracts the heat dissipation function from the electrical interconnect system by creating separate thermal via holes that are distinct from the signal and power interconnect pathways. This extraction allows the interconnect layers to maintain their complex routing for high-density electrical connections while the thermal vias provide a dedicated, simplified pathway for heat removal.

Inventive Principle:
Principle #2Taking out (Extraction)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution enhances heat dissipation capabilities by providing a direct and unrestricted path for heat removal from the semiconductor die, improving device performance and reliability by reducing heat buildup within the package.

Implementation Method 1

a thermally conductive material fills the opening to form a thermal via... heat can be dissipated directly from the semiconductor dies

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS9312206B2Semiconductor package with thermal via and method for fabrication thereof
Publication Date: 2016.04.12 NXP USA INC
  • US9312206B2 patent drawing
  • US9312206B2 patent drawing
  • US9312206B2 patent drawing

AI summary

A semiconductor package includes a semiconductor die having an active face and dielectric layers disposed on the active face of the semiconductor die. At least one opening is formed through the dielectric layers and extends from a non-bond pad area of the active face to an exterior surface of the dielectric layers. An electrically conductive layer is formed in the opening and is in physical contact with the active face of the semiconductor die. A thermally conductive material fills the opening to form a thermal via for dissipating heat away from the semiconductor die.