Vertical Power Semiconductor Component Metallization Thickness Design
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing vertical power semiconductor components with low blocking capability face challenges in reducing component resistance and production yield due to the risk of cracking during thinning processes, and there is a need to enhance the functionality and simplify the production of packaged semiconductor devices.
Innovation Solution
A vertical power semiconductor component design featuring metallizations of different thicknesses on electrode contact areas, where the first metallization on the electrode contact area is significantly thicker than the second metallization on the control electrode area, allowing for improved mechanical stability, reduced component thickness, and simplified electrical connections, while the thicker metallization also serves as a spacer and stabilization layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If the thickness of the semiconductor body is reduced to lower component resistance, then the on resistance and losses are reduced, but cracks may arise in the semiconductor body or the semiconductor wafer may even be broken during the thinning process
Solution Approach 1:
A stabilization layer is applied to the front side of the semiconductor body before the thinning by grinding process. This preliminary action reinforces the semiconductor body, preventing cracks and breaks during subsequent thinning operations, thereby maintaining high yield while achieving the desired thin thickness for low resistance.
Solution Approach 2:
The stabilization layer acts as a cushioning reinforcement applied beforehand to the semiconductor body. This layer compensates for the mechanical weakness that would otherwise cause cracking during thinning, allowing the semiconductor body to be thinned to the required thickness without compromising structural integrity.
2Reliability
If a stabilization layer is applied on the front side prior to thinning by grinding, then the mechanical stability is improved and yield losses are reduced, but the chip volume increases and the total thickness of the component remains approximately the same
Solution Approach 1:
The stabilization layer is designed with specific material properties and thickness parameters that allow it to provide mechanical reinforcement while occupying minimal volume. By carefully selecting the thickness and material composition, the layer provides necessary structural support without significantly increasing the overall chip volume or component thickness.
3Loss of energy
If the semiconductor body is thinned by grinding, then the component resistance is reduced, but the process complexity and risk of defects increase
Solution Approach 1:
The stabilization layer is applied as a preliminary measure before thinning, which simplifies the overall process by preventing defects during thinning. This preliminary reinforcement eliminates the need for complex defect management and rework procedures, making the thinning process more straightforward and reliable.
Data Source
AI summary
A vertical power semiconductor component (1) having a top side (3) and a rear side (4) is provided. The top side (3) has at least one first electrode contact area (8) and at least one control electrode area (9) and the rear side (4) has a second electrode contact area (7). A first metallization (10) having a thickness a is arranged on the first electrode contact area (8). A second metallization (11) having a thickness b is arranged on the control electrode area (9). A third metallization (6) having a thickness c is arranged on the second electrode contact area (7). The thickness a of the first metallization (10) is at least 10 times thicker than the thickness b of the second metallization (11).