Organic Semiconductor Dielectric Layering for Leakage Reduction
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Solution Overview
Problem
There is a need for new organic dielectric bodies that enhance the performance of active semiconductor devices, particularly in organic field-effect transistors (FETs), by improving charge carrier mobility and minimizing leakage current, which existing dielectric materials fail to achieve due to issues with dipole interactions and structural integrity.
Innovation Solution
The use of a hydrogenated styrene-butadiene block copolymer as a dielectric body with a low dielectric constant, interposed between the organic semiconductor and a higher dielectric constant organic dielectric body, to act as an insulator and facilitate charge carrier transport while minimizing dipole interactions and leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If a high dielectric constant organic dielectric body is used directly adjacent to the organic semiconductor, then the capacitance needed to induce charge carrier mobility is improved, but dipole interactions increase causing leakage current and reduced device reliability
Solution Approach 1:
The patent introduces a first organic dielectric body with low dielectric constant as an intermediary layer between the organic semiconductor and the second organic dielectric body with high dielectric constant. This intermediary layer prevents direct dipole interactions between the semiconductor and the high-k dielectric, thereby reducing leakage current while still allowing the high-k dielectric to provide the necessary capacitance for charge carrier mobility through the layered structure.
Solution Approach 2:
The dielectric structure is segmented into two distinct layers: a first organic dielectric body with low dielectric constant adjacent to the semiconductor, and a second organic dielectric body with high dielectric constant on the opposite side. This segmentation allows each layer to perform its specific function - the first layer prevents leakage, while the second layer provides capacitance - thereby resolving the contradiction between reliability and power.
2Ease of manufacture
If existing organic dielectric materials are used, then fabrication is simplified, but structural integrity and device performance are compromised due to insufficient insulation and dipole interactions
Solution Approach 1:
The patent employs a composite dielectric structure consisting of two different organic dielectric materials with complementary properties. The first material provides excellent insulation with low dielectric constant, while the second material provides high capacitance with high dielectric constant. This composite approach maintains fabrication simplicity while significantly improving structural integrity and device performance through the synergistic combination of materials.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves charge carrier mobility and reduces leakage current in FETs, enabling better performance and structural integrity of the semiconductor devices by effectively insulating the organic semiconductor from the higher dielectric body, thus enhancing the overall functionality of the laminate.
Implementation Method 1
a first body including a hydrogenated vinylaromatic-diene block copolymer on said organic semiconductor composition body
Implementation Method 2
improves charge carrier mobility and reduces leakage current in FETs
Data Source
AI summary
Apparatus including a support body; an organic semiconductor composition body on the support body, —and a first body including a hydrogenated vinylaromatic-diene block copolymer on the organic semiconductor composition body. Apparatus including a support body, —a first body including a hydrogenated vinylaromatic-diene block copolymer on the support body; and an organic semiconductor composition body on the first body. Techniques for making an apparatus.