Contact Plug Adhesion via Nitrogen Plasma Nitrided Interface

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Solution Overview

Problem

As semiconductor devices miniaturize, the adhesion between conductive plugs and surrounding materials becomes poor, particularly in non-crystalline films formed by deposition techniques like CVD, leading to increased resistance and leakage issues.

Innovation Solution

A nitrogen (N2/H2) plasma treatment is applied to the adhesion layer to incorporate nitrogen, forming a metal nitride interface that enhances adhesion between the conductive plug and the substrate, even in the absence of a traditional adhesion layer, thereby improving the contact's structural integrity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional deposition techniques (CVD) are used to form conductive plugs in miniaturized semiconductor devices, then manufacturing process compatibility is maintained, but adhesion between the conductive plug and surrounding materials deteriorates

Engineering Contradiction:
Improveadhesion strengthVSAvoidprocess complexity
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

A plasma treatment step is performed before depositing the conductive plug material to pre-treat the surface of the surrounding materials. This preliminary action modifies the surface chemistry to enhance adhesion, allowing conventional CVD processes to be used without requiring changes to the main deposition工艺流程

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The plasma treatment changes physical and chemical parameters of the surface including increasing surface energy, creating reactive functional groups, and modifying surface roughness. These parameter changes enable strong adhesion between the conductive plug and surrounding materials while maintaining compatibility with existing manufacturing processes

Inventive Principle:
Principle #35Parameter changes

2Productivity

If minimum feature size is reduced to increase integration density, then more components can be integrated into a given area, but adhesion between conductive plugs and surrounding materials deteriorates

Engineering Contradiction:
Improveintegration densityVSAvoidadhesion strength
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The plasma treatment is applied locally to the specific areas where conductive plugs will be formed, creating localized zones with enhanced adhesion properties. This allows miniaturization and high integration density while ensuring reliable adhesion at each individual contact point despite the reduced feature sizes

Inventive Principle:
Principle #3Local quality

3Device complexity

If traditional adhesion layers are omitted to simplify the structure, then device complexity is reduced, but adhesion between conductive plug and substrate deteriorates

Engineering Contradiction:
Improvelayer structureVSAvoidadhesion strength
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The surrounding materials themselves are plasma-treated to provide self-adhesion properties, eliminating the need for separate adhesion promoter layers. The plasma-modified surface of the surrounding materials directly bonds to the conductive plug material, simplifying the overall layer structure while maintaining strong adhesion

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

Plasma treatment fundamentally changes the surface parameters of the surrounding materials, including surface energy, chemical composition, and morphology. These parameter changes enable direct adhesion to the conductive plug without requiring additional adhesion layers, thus reducing device complexity while improving reliability

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The plasma treatment significantly improves the adhesion between the conductive plug and the substrate, reducing de-wetting and enhancing the reliability of micro-electronic and nano-electronic devices by creating a strong, nitrogen-rich interface that maintains stability through thermal processes.

Implementation Method 1

A nitrogen (N2/H2) plasma treatment is applied to the adhesion layer to incorporate nitrogen

Methodology Applied
Scientific EffectPlasma treatment: Plasma

Implementation Method 2

forming a metal nitride interface that enhances adhesion

Methodology Applied
Scientific EffectNitridation: Nitriding

Data Source

PatentUS12009200B2Treatment for adhesion improvement
Publication Date: 2024.06.11 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US12009200B2 patent drawing
  • US12009200B2 patent drawing
  • US12009200B2 patent drawing

AI summary

A nitrogen plasma treatment is used on an adhesion layer of a contact plug. As a result of the nitrogen plasma treatment, nitrogen is incorporated into the adhesion layer. When a contact plug is deposited in the opening, an interlayer of a metal nitride is formed between the contact plug and the adhesion layer. A nitrogen plasma treatment is used on an opening in an insulating layer. As a result of the nitrogen plasma treatment, nitrogen is incorporated into the insulating layer at the opening. When a contact plug is deposited in the opening, an interlayer of a metal nitride is formed between the contact plug and the insulating layer.