Controller Adjusts Select Transistor Voltage for Memory Stability

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Solution Overview

Problem

Semiconductor memory devices face operational instability due to changes in threshold voltage distributions of select transistors, leading to errors in data storage, reading, or erasure, which existing technologies fail to adequately address.

Innovation Solution

A method of operating a controller that compensates for changes in threshold voltage distributions by adjusting the operation voltage of select transistors in failed memory blocks, ensuring successful operations and improving reliability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional operation voltages are used for select transistors, then the memory device operates with standard performance, but threshold voltage distribution changes cause operational failures and reduced reliability

Engineering Contradiction:
Improveoperational reliabilityVSAvoidadaptability to threshold voltage changes
Core Design Contradiction:
ReliabilityVSAdaptability or versatility

Solution Approach 1:

The patent implements dynamic adjustment of operation voltages for select transistors based on detected threshold voltage distribution changes. The controller monitors threshold voltage shifts and adapts the operation voltages in real-time, transforming the static voltage system into a dynamic one that responds to changing conditions, thereby maintaining operational reliability despite threshold voltage drift

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent changes the operation voltage parameters of select transistors to compensate for threshold voltage distribution changes. By adjusting voltage levels dynamically, the system compensates for threshold voltage shifts and maintains proper transistor operation, resolving the contradiction between reliability and adaptability to parameter changes

Inventive Principle:
Principle #35Parameter changes

2Reliability

If operation voltage is increased to compensate for threshold voltage shifts, then operational reliability improves, but energy consumption increases

Engineering Contradiction:
Improveoperational reliabilityVSAvoidenergy consumption
Core Design Contradiction:
ReliabilityVSUse of energy by moving object

Solution Approach 1:

The patent dynamically adjusts operation voltage parameters based on actual threshold voltage distribution changes rather than using fixed high voltages. This allows the system to use higher voltages only when necessary to compensate for threshold shifts, and return to lower voltages when conditions permit, thus maintaining reliability while minimizing energy consumption

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent implements a feedback mechanism where the controller monitors threshold voltage distribution and adjusts operation voltages accordingly. This closed-loop control ensures that voltage increases are applied only when threshold voltage changes warrant compensation, preventing unnecessary energy consumption while maintaining operational reliability

Inventive Principle:
Principle #23Feedback

Data Source

PatentUS10937511B2Semiconductor memory device, memory system including controller, and method of operating controller
Publication Date: 2021.03.02 SK HYNIX INC
  • US10937511B2 patent drawing
  • US10937511B2 patent drawing
  • US10937511B2 patent drawing

AI summary

A method of operating a controller that controls an operation of a semiconductor memory device includes controlling the semiconductor memory device to perform an operation for a selected memory block, determining whether or not the operation is successful, and compensating for a change in a threshold voltage distribution of select transistors by changing an operation voltage applied to the select transistors included in the selected memory block, based on whether or not the operation is successful.