Convex Channel Pad for Vertical Transistor Integration
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Solution Overview
Problem
The increasing demand for compact electronic devices with high data processing capabilities requires more integrated semiconductor devices, but existing semiconductor devices face challenges in achieving reliable vertical transistor structures with efficient channel pads and gate dielectric layers.
Innovation Solution
A semiconductor device with vertically stacked gate electrodes and channel holes, featuring channel pads with convex upper surfaces and a gate dielectric layer extending along the channel pad side surfaces, along with a method of manufacturing that includes forming sacrificial layers, insulating layers, and etch-stop processes to create these structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If vertical transistor structure is adopted to increase integration degree, then device integration is improved, but manufacturing precision and reliability of channel pads become more difficult to achieve
Solution Approach 1:
The channel pad upper surface is formed with a convex shape instead of a flat surface. This curvature allows the contact hole to be formed more easily and ensures reliable electrical connection between the channel region and upper electrode, resolving the manufacturing precision difficulty in vertical transistor structures
Solution Approach 2:
The channel pad extends in the vertical dimension with a convex upper surface protruding from the insulating layer. This three-dimensional configuration provides better connection reliability while maintaining high integration density in the vertical transistor structure
2Reliability
If channel pads are formed to protrude from insulating layer, then connection reliability is improved, but device complexity increases
Solution Approach 1:
The channel pad is formed as an integrated structure combining the conductive material filling the channel hole and the convex upper surface portion. This merging of functions reduces the number of separate components while maintaining connection reliability
Solution Approach 2:
The channel pad structure serves multiple functions: it provides electrical connection between channel region and upper electrode, acts as an etch stop layer during manufacturing, and provides mechanical support. This multi-functionality reduces overall device complexity despite the protruding structure
Data Source
AI summary
Semiconductor devices are provided. A semiconductor device includes a stack of gate electrodes. The semiconductor device includes a channel material in a channel recess in the stack. The semiconductor device includes a channel pad on the channel insulating layer. The channel pad has a curved upper surface. Methods of manufacturing semiconductor devices are also provided.