Nonvolatile Memory Devices With Convex Electrode Lines
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Solution Overview
Problem
Current nonvolatile memory devices face challenges in scaling down due to increased probability of electrical shorts between electrode lines, which affects integration density and reliability.
Innovation Solution
The manufacturing process involves forming first and second electrode lines with convex top surfaces and a memory layer in between, where the electrode lines cross each other at a right angle, with contact extension portions filling edge valleys between the electrode lines and memory patterns, increasing contact areas and reducing the likelihood of shorts.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If electrode lines are scaled down to increase integration density, then integration density is improved, but the probability of electrical shorts between electrode lines increases
Solution Approach 1:
The electrode lines are formed with convex top surfaces instead of flat surfaces. This curvature increases the separation distance between adjacent electrode lines at their closest approach points, thereby reducing the probability of electrical shorts while maintaining high integration density through compact routing.
Solution Approach 2:
The convex shape is applied specifically to the top surfaces of the electrode lines where the critical spacing issue occurs, while the rest of the electrode line structure maintains its original dimensions. This localized modification addresses the shorting problem without compromising overall integration density.
2Reliability
If convex top surfaces are formed on electrode lines to reduce shorts, then reliability is improved, but manufacturing complexity increases
Solution Approach 1:
The convex top surfaces are formed on the electrode lines during the initial fabrication process using a single etching step with appropriate masking. This preliminary formation of the convex shape integrates the reliability improvement into the base manufacturing flow without requiring separate complex processing steps.
Solution Approach 2:
The etching parameters (such as etchant concentration, temperature, or exposure time) are optimized to naturally produce convex top surfaces on the electrode lines. By adjusting these parameters, the desired geometry is achieved through a standard etching process rather than requiring additional specialized equipment or steps.
Data Source
AI summary
A nonvolatile memory device includes a plurality of first electrode lines including upper portions that have convex top surfaces. A plurality of second electrode lines are disposed over the plurality of first electrode lines to cross the plurality of first electrode lines, and a plurality of memory patterns are disposed between the plurality of first electrode lines and the plurality of second electrode lines.