Coplanar Interconnect Structures for Lower-Heat Semiconductor Assemblies
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Solution Overview
Problem
Conventional semiconductor packaging methods face challenges such as heat waste, latency, and power consumption when directly connecting semiconductor devices into a single assembly using wire bonds, TSVs, or solder joints, which limits the complexity and functionality of semiconductor device assemblies.
Innovation Solution
The implementation of semiconductor device assemblies with coplanar interconnect structures, featuring conductive traces through a common substrate and dielectric sheaths, allows for direct connections between semiconductor devices and the substrate, enabling configurable and efficient signal transmission while providing structural support and reducing heat waste.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If wire bonds, TSVs, or solder joints are used to directly connect semiconductor devices into a single assembly, then the devices can be electrically coupled together, but heat waste and power consumption increase
Solution Approach 1:
The patent introduces coplanar interconnect structures as intermediary elements that provide electrical coupling between semiconductor devices while offering superior thermal management. These interconnects act as mediators that reduce the thermal resistance pathway compared to traditional wire bonds and TSVs, thereby reducing heat waste and power consumption while maintaining reliable electrical connections.
Solution Approach 2:
The patent replaces the mechanical wire bond system with a coplanar interconnect structure that uses direct planar contact and conductive pathways within the substrate. This substitution eliminates the need for elevated wire bonds and creates a more thermally efficient electrical coupling mechanism that reduces heat waste.
2Reliability
If wire bonds, TSVs, or solder joints are used to directly connect semiconductor devices, then electrical coupling is achieved, but the complexity and functionality of the assembly is limited
Solution Approach 1:
The coplanar interconnect structures serve multiple functions simultaneously: they provide electrical coupling between devices, offer thermal management pathways, enable configurable signal transmission routes, and provide structural support. This multi-functionality increases the adaptability and versatility of the semiconductor assembly beyond what traditional wire bonds or TSVs can achieve.
Solution Approach 2:
The patent enables configurable signal transmission through the coplanar interconnect structures, allowing the electrical pathways to be dynamically routed to support varied devices and applications. This configurability enhances the functionality and adaptability of the assembly, allowing it to be optimized for different operational requirements.
3Object-affected harmful factors
If conventional packaging methods are used with encapsulation, then protection from environmental factors is provided, but heat dissipation is impaired
Solution Approach 1:
The patent employs coplanar interconnect structures with dielectric sheaths that provide protection while maintaining thermal pathways. These thin-film interconnect structures offer environmental protection through their layered construction while preserving heat dissipation capabilities through direct thermal coupling with the substrate, unlike bulk encapsulation materials that impede heat flow.
Data Source
AI summary
A semiconductor device assembly is provided. The assembly includes a substrate with an inner and outer surface, a plurality of semiconductor devices disposed on the inner surface, a central interconnect structure disposed between the devices, a plurality of peripheral interconnect structures disposed around the devices, and an encapsulant material at least partially encapsulating the devices and the interconnects. The central interconnect structure includes a plurality of conductors and a sheath of dielectric material that surrounds and electrically isolates each of the plurality of conductors. Each of the peripheral interconnect structures is electrically coupled to at least one of the semiconductor devices. The encapsulant comprises a different material than the dielectric material.