Copolymer Buffer Layer for Capacitor Etching
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Solution Overview
Problem
Current methods for forming buffer layers in capacitors are time-consuming and prone to voids, require high-cost exposure devices, and can damage lower electrodes, leading to inefficiencies and malfunctions in semiconductor devices.
Innovation Solution
A method using a cross-linked water-soluble copolymer with a repeating unit of N-vinyl-2-pyrrolidone and acrylate, which forms a buffer layer pattern that acts as an etching mask, allowing for efficient removal without plasma ashing and reducing manufacturing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If oxide deposition and etch-back processes are used to form buffer layer pattern, then buffer layer pattern can be formed, but the process requires relatively long duration of time
Solution Approach 1:
The patent changes the material parameter from conventional oxide to copolymer material, and changes the formation method parameter from deposition/etching to spin-coating/curing. This parameter transformation dramatically reduces the process time while maintaining the buffer layer pattern formation capability.
Solution Approach 2:
The patent replaces the complex mechanical deposition and etching system with a simpler spin-coating and thermal curing system. This substitution eliminates time-consuming deposition and etching steps while achieving the same patterning function.
2Manufacturing precision
If atomic layer deposition process is employed to form buffer layer pattern without void, then void-free buffer layer can be achieved, but the process requires relatively long duration of time
Solution Approach 1:
The patent changes the material parameter from oxide requiring ALD to copolymer suitable for spin-coating, and changes the application method parameter to achieve void-free formation through spin-coating followed by curing, thereby reducing process time.
Solution Approach 2:
The patent replaces the time-consuming atomic layer deposition system with a spin-coating and thermal curing system that achieves void-free buffer layer formation more efficiently.
3Manufacturing precision
If photoresist film is used to form buffer layer pattern, then buffer layer pattern can be formed, but high cost exposure devices are needed
Solution Approach 1:
The patent changes the material parameter from photoresist requiring expensive exposure equipment to copolymer that can be cured by thermal or UV treatment with simpler equipment, thereby reducing manufacturing cost.
Solution Approach 2:
The patent replaces the expensive photoexposure system with a thermal or UV curing system that uses simpler, more cost-effective equipment to achieve the same patterning function.
4Strength
If high temperature baking process is performed on photoresist film, then photoresist film hardening is achieved, but the hardened photoresist film may not be easily removed through plasma ashing process
Solution Approach 1:
The patent changes the material parameter from photoresist to copolymer with different thermal properties, allowing the buffer layer to be removed more easily through plasma ashing or other processes after curing.
Solution Approach 2:
The patent designs the copolymer buffer layer to be easily removable after serving its temporary function as an etching mask, facilitating simpler and more efficient process steps.
5Productivity
If oxygen plasma ashing process is performed at high temperature to improve ashing efficiency, then buffer layer pattern removal efficiency is improved, but the lower electrode may be deteriorated and/or oxidized
Solution Approach 1:
The patent changes the copolymer material parameters to enable removal at lower temperatures or under milder plasma conditions, thereby protecting the lower electrode from damage while maintaining removal efficiency.
Solution Approach 2:
The copolymer buffer layer acts as an intermediary that can be selectively removed under controlled conditions without damaging the underlying lower electrode, facilitating efficient removal while protecting sensitive structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method simplifies the manufacturing process, improves etching resistance, and enhances the efficiency of capacitor production by eliminating voids and residue issues, thereby improving the electric capacitance of semiconductor devices.
Implementation Method 1
The buffer layer pattern has a cross-linked structure of water-soluble copolymers including a repeating unit of N-vinyl-2-pyrrolidone and a repeating unit of an acrylate
Data Source
AI summary
In a method of forming a pattern, a mold layer having an opening is formed on a substrate. A conductive layer is formed on the mold layer having the opening, the conductive layer having a substantially uniform thickness. A buffer layer pattern is formed in the opening having the conductive layer, the buffer layer pattern having a cross-linked structure of water-soluble copolymers including a repeating unit of N-vinyl-2-pyrrolidone and a repeating unit of acrylate. An upper portion of the conductive layer exposed over the buffer layer pattern is etched. Accordingly, a conductive pattern for a semiconductor device is formed on the substrate. The method of forming a pattern may simplify manufacturing processes for a capacitor and a semiconductor device, and may improve their efficiencies.